Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Hidehiro Nakagawa

Jun Saito

Hiroshi Hata

Takashi Suzuki

Tsuyoshi Nishiwaki

Masayasu Ishiko

Yukihiro Hisanaga

Sachiko Tanaka

Hirokazu Saito

The semiconductor device includes: a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one of the gate electrodes and protruding from the front surface of the semiconductor substrate; the first metal film covering the front surface of the semiconductor substrate and plurality of the interlayer insulation films; and the protective insulation film covering a part of the first metal film. In a cross-section traversing the plurality of trenches, the end of the protective insulation film is above one of the interlayer insulation films, and a width of the one of the interlayer insulation films that is below the end of the protective insulation film is wider than widths of other interlayer insulation films.

Semiconductor device

A semiconductor device having a substrate; an emitter electrode or source electrode formed on the top surface side of the substrate; a gate electrode formed on the top surface side of the substrate; and a collector electrode or drain electrode formed on the bottom surface side of the substrate. The device includes an insulating region formed so as to surround a device-forming region provided on the top surface side of the substrate; and a drift region of the device-forming region, the drift region being in contact with the insulating region, is formed of a semiconductor layer having the same conduction type as that of a channel formed through application of an electric potential to the gate electrode. The gate electrode is a trench gate. An outer peripheral portion of the emitter electrode or source electrode extends in a width of 20 &#x3bc;m or more over the top surface of the insulating region. The insulating region includes, in its interior, a dielectric region having a relative dielectric constant lower than that of the insulating region.

Semiconductor device and a method for producing the same

Growing community of inventors

Aichi-ken, Japan

Hidehiro Nakagawa