Fujitsu Corporation

Fujitsu Semiconductor Limited

Hideharu Shido

Yasuyoshi Mishima

Teruo Kurahashi

Kenji Ishikawa

Takeo Nagata

Yukie Sakita

A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.

Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatus

An MIM device includes a lower electrode of a metal nitride film, a hysteresis film of an oxide film containing Nb formed on the lower electrode, and an upper electrode of a metal nitride film formed on the hysteresis film.

MIM device and electronic apparatus

Growing community of inventors

Kawasaki, Japan

Hideharu Shido