Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Nippon Shokubai Co., Ltd.

Renesas Electronics Corporation

Mitsubishi Heavy Industries Limited

Renesas Technology Corp.

Hideharu Nobutoki

Minoru Sato

Teruhiko Kumada

Naoki Yasuda

Suguru Nagae

Noboru Mikami

Tetsuya Yamamoto

Toshiyuki Toyoshima

Sei Tsunoda

Takuya Kamiyama

Masazumi Matsuura

Kinya Goto

Takeo Ishibashi

Akira Tsumura

Shigetoshi Ipposhi

Mamoru Terai

Hiroshi Koezuka

Yasutaka Nakatani

Junjiro Sakai

Tetsuyuki Kurata

Tadashi Shimazu

Hiroyuki Fuchigami

Shunkei Suzuki

Toshihiko Nishimori

Hidetaka Kafuku

Yoshiharu Ono

Junichi Nakazono

Yasumitsu Nomura

Satoru Hayasi

Shinya Shibata

Toshihito Fujiwara

Takumi Oho

Provided is a heat storage material, consisting of a thermo-sensitive polymer gel formed of a thermo-sensitive polymer and a solvent selected from the group consisting of water, an organic solvent, and a mixture thereof, wherein the hydrophilicity and hydrophobicity of the heat storage material reversibly change to each other across the lower critical solution temperature thereof, and in the process of the change, the solvent in the thermo-sensitive polymer gel maintains a liquid state.

Heat storage material, method of producing same, and heat storage tank

A heat storage unit includes: a heat storage material that contains water and high polymers that exhibit hydrophilicity or hydrophobicity depending on a temperature; a heat exchanger that causes heat exchange to be performed between a heating fluid and the heat storage material to heat the heat storage material and store heat in the heat storage material, and causes heat exchange to be performed between a heat utilization fluid and the heat storage material to receive heat from the heat storage material and cause heat to be transferred from the heat storage material; and a container that is filled with the heat storage material and houses the heat exchanger.

Heat storage unit, heat storage system, and heat storage method

A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; Rmay be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. 

Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film

A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): or an inorganic or organic compound having a group derived from the borazine compound (1-2) to undergo a condensation reaction, thereby producing an oligomer or polymer, wherein Rto Rare independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an amino group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkylphosphino group, or a group of the formula: Si(OR)(OR)(OR), and at least one of Rto Ris not hydrogen atom.

Source material for preparing low dielectric constant material

A plasma CVD apparatus including a reaction chamber including an inlet for supplying a compound including a borazine skeleton, a feeding electrode, arranged within the reaction chamber, for supporting a substrate and being applied with a negative charge, and a plasma generating mechanism, arranged opposite to the feeding electrode via the substrate, for generating a plasma within the reaction chamber. A method forms a thin film wherein a thin film is formed by using a compound including a borazine skeleton as a raw material, and a semiconductor device includes a thin film formed by such a method as an insulating film. The apparatus and method enable to produce a thin film wherein low dielectric constant and high mechanical strength are stably maintained for a long time and insulating characteristics are secured.

Plasma CVD apparatus, method for forming thin film and semiconductor device

An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (); an electromagnetic wave is introduced into the chamber () using with an inductive coupling type plasma generation mechanism () to convert the gas into a plasma; a substrate () is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate ().

Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device

There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

Semiconductor device and method of fabricating the same

A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600&#xb0; C. In the following formula, Rand Rindependently represent alkyl group or acyl group; Rrepresents hydrogen atom or alkyl group; and n represents an integer of 1 to 5. 

Composition for low dielectric material, low dielectric material and method for production thereof

There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.

Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device

A material for a rare earth permanent magnet having a high magnetic coercive force and a high residual magnetic flux density. 28 to 35% by weight of at least one rare earth element selected from the group consisting of neodymium, praseodymium, dysprosium, terbium, and holmium, 0.9 to 1.3% by weight of boron, 0.25 to 3% by weight of phosphorus, iron, and inevitable impurities. It can further comprise 0.1 to 3.6% by weight of cobalt and 0.02 to 0.25% by weight of copper.

Rare earth element permanent magnet material

A via-filling material includes a polymer containing a repeating unit represented bywherein Rone of hydrogen, fluorine, chlorine, bromine, and methyl group; Ris one of hydrogen, a Calkyl group, and a Calkyl group in which the hydrogen is replaced by at least one of fluorine, chlorine, and bromine; and X is &#x2014;C(&#x2550;O)O&#x2014; or &#x2014;S(&#x2550;O)O&#x2014;. This via-filling material does not generate deposits around an opening of a via hole during plasma etching and provides a semiconductor integrated circuit with high reliability, even when a trench wider than the via hole is formed by plasma etching around the via hole filled with the via-filling material.

Via-filling material and process for fabricating semiconductor integrated circuit using the material

A low dielectric constant material having excellent water resistance comprising a borazine skeleton structure represented by any one of the formulas (2) to (4):wherein Rto Rare independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group, a substituted aryl group, an alkenyl group, an alkylamino group, an alkoxyl group, a thioalkoxyl group, a carbonyl group, a silyl group, an alkylsilyl group, a phosphino group, an alkyiphosphino group, or a group of the formula: Si(OR)(OR)(OR), provided that at least one of Rto Ris not a hydrogen atom.

Low dielectric constant material, insulating film comprising the low dielectric constant material, and semiconductor device

A magnetic interaction is calculated by expressing a localized magnetic orbital as a linear combination of molecular orbitals and determining a localized magnetic orbital to be calculated from a maximum overlap condition evaluated between a reference orbital localized in anatomic orbital and the localized magnetic orbital. Another magnetic interaction is calculated by expressing a localized magnetic crystal orbital as a linear combination of crystal orbitals and determining a localized magnetic crystal orbital to be calculated from the maximum overlap condition.

Growing community of inventors

Tokyo, Japan

Hideharu Nobutoki