Sony Corporation

Hideharu Nakajima

Toyoharu Oohata

Toshiaki Iwafuchi

Yoshiyuki Yanagisawa

Masato Doi

Setsuo Usui

Junichi Sato

Yuji Suzuki

Yoshifumi Mori

Yasuhiro Sakamoto

Takashi Noguchi

Hideaki Kuroda

A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

Display device and display unit using the same

A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device

Method for producing a display unit

Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.

Display system and method of producing the same

Apparatus for producing a display unit

A display unit having a sufficient luminance and a method of fabricating the display unit are provided. The display unit includes micro-sized semiconductor light emitting devices fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices formed by selective growth are each buried in a first insulating layer made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes of each of the light emitting devices are extracted. These light emitting devices are fixedly arrayed on the upper plane of the base body at intervals. A second insulating layer made from an epoxy resin is formed on the plane of the base body so as to cover the semiconductor light emitting devices each of which has been buried in the first insulating layer. The electrodes are extracted to the upper surface of the second insulating layer via specific connection holes formed in the second insulating layer, and the electrode is led to a connection electrode provided on the base body via a connection hole formed in the second insulating layer.

Display unit and method of fabricating the same

A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.

SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING SEMICONDUCTOR THIN FILM, APPARATUS FOR FABRICATING SINGLE CRYSTAL SEMICONDUCTOR THIN FILM, AND METHOD OF FABRICATING SINGLE CRYSTAL THIN FILM, SINGLE CRYSTAL THIN FILM SUBSTRATE, AND SEMICONDUCTOR DEVICE

An optical writing type liquid crystal light valve apparatus is composed so as to have at least first and second transparent substates, a photoconductive layer, first and second electrodes which are arranged so as to contract with and sandwich the photoconductive layer or arranged on one surface of the photoconductive layer, an optical reflective layer, a liquid crystal layer and a third electrode. The second electrode is composed of split electrode sections obtained by splitting the second electrode into a plurality of electrode sections. Opposing areas, which face each other via the photoconductive layer, of the photoconductive layer which the first electrode and the split electrode sections of the second electrode are set to be smaller than an area of the split electrode section of the second electrode.

Optical writing type liquid crystal light valve apparatus and producing method thereof

Disclosed is a method capable of producing, at a high throughput, a large-area FPD such as a liquid crystal display panel or O-ELD having a horizontal scanning circuit portion including a TFT characteristic having a high drive current (a high mobility), and a pixel portion and a vertical scanning circuit portion each of which contains crystal grains excellent in uniformity. The method includes the steps of: irradiating a location, in which a horizontal scanning circuit equivalent portion is to be formed, of an amorphous silicon thin film panel to be crystallized with 10 to 30 shots of a laser beam having a uniform energy density distribution and having a rectangular shape of a long-side larger than a width of the amorphous silicon thin film panel and a short-side larger than a short-side of the horizontal scanning circuit equivalent portion, in a state in which a relative positional relationship between the amorphous silicon thin film panel and the laser beam is fixed; and irradiating a location, in which a vertical scanning circuit portion and a pixel portion are to be formed, of the amorphous silicon thin film panel with the laser beam while moving the laser beam relative to the amorphous silicon thin film panel along the length direction of the amorphous silicon thin film panel.

Method of producing liquid crystal display panel

A liquid crystal light valve includes a first substrate having a function element and an orientation film formed on a first base, a second substrate having an opposed electrode and an orientation film formed on a second base opposed to the first substrate, a spacer disposed at a predetermined position between the first substrate and the second substrate, a liquid crystal layer filled between the first substrate and the second substrate, and a light shielding area provided on an incident light side from end portion of the spacer located to the second substrate side, in which at least a part of outer periphery of a two-dimensional shape, which is obtained by projection a section of the spacer perpendicular to the optical axis of the incident light in at least a part of height in the optical axis direction of the incident light on the light shielding area in parallel to the optical axis, is contained in the light shielding area. As a result, a light leak due to liquid crystal molecules located near the pillar-shaped spacer and disturbed in orientation can be prevented and hence the contrast can be increased.

Liquid crystal light valve apparatus in which the spacers having protrusion and recess

A polishing pad for chemical mechanical polishing capable of simultaneously realizing a reduction of process costs by the reduction of the amount of usage of a polishing slurry and an improvement of a polishing quality of a wafer surface, and a polishing apparatus and a polishing method using the same, provided with a first area A at a side of a predetermined radial line R of the polishing pad in the direction of rotation or advance 30 of the polishing pad, a second area B at an opposite side thereof, and grooves having projecting portions 203 in a direction opposite to the direction of rotation or advance 30 of the polishing pad formed only in the second area B.

Polishing pad, polishing apparatus and polishing method

Disclosed is a chemical-mechanical polishing apparatus having a polishing cloth enabling planarization in which occurrence of mictoscracthes is suppressed without the need of provision of a dressing step. The apparatus basically includes a turn table on which a polishing cloth is mounted, a holding base for holding a substrate to be processed, and a polishing solution supply unit. The surface of the polishing cloth has irregularities formed by arranging a large number of truncated cone-shaped small holes in a delta-shaped pattern at specific intervals. The depth of the small holes is set at about 800 .mu.m and the interval is set at about 300 .mu.m. Such an apparatus is effective to improve the yield in fabrication of highly integrated semiconductor devices using the apparatus at a planarization step.

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Kanagawa, Japan

Hideharu Nakajima