Sanyo Electric Co., Ltd.

Hideharu Nagasawa

Kiyoshi Yoneda

Yasuhiro Takeda

Hideaki Fujiwara

Kazuhiro Sasada

Kazunari Honma

Atsuhiro Nishida

Hiroyuki Aoe

Shoji Sudo

Mamoru Arimoto

Takashi Hiroshima

Yosifumi Matusita

A semiconductor memory capable of attaining a long life, a low voltage, a high-speed operation, low power consumption and high integration is provided. The semiconductor memory comprises a control gate electrode, a floating gate electrode, a semiconductor region, a first insulator film formed on one surface of the semiconductor region and a second insulator film formed on another surface of the semiconductor region. A prescribed voltage is applied to the control gate electrode or a drain region thereby injecting carriers from the control gate electrode or the drain region into the floating gate electrode through the first insulator film, the semiconductor region and the second insulator film.

Semiconductor memory and method of operating semiconductor memory

A pair of source/drain regions are formed on a semiconductor substrate at a predetermined interval. A gate insulator film is formed on the semiconductor substrate between the source/drain regions of the pair. A gate electrode is formed on the gate insulator film. A film for covering the gate electrode and the source/drain regions has a low permeability against water and a hydroxide group, and has a thickness greater than 3 nm and less than 5 nm.

Semiconductor device with film covering

Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.

Semiconductor memory device with stack type memory cell

Growing community of inventors

Takatsuki, Japan

Hideharu Nagasawa