Tosoh Corporation

Tosoh Sgm Corporation

Hideharu Horikoshi

Kazuyoshi Arai

Kazumasa Suetsugu

Yoshinori Harada

Takashi Sakaki

Tsutomu Takahata

Nobusuke Yamada

Kanji Yoshimitsu

Shinkichi Hasimoto

Masahito Uchida

Masato Uchida

Fused silica glass having an internal transmittance of UV with 245 nm wavelength, being at least 95% at 10 mm thickness, a OH content of not larger than 5 ppm, and a content of Li, Na, K, Mg, Ca and Cu each being smaller than 0.1 ppm. Preferably the glass has a viscosity coefficient at 1215&#xb0; C. of at least 10Pa&#xb7;s; and a Cu ion diffusion coefficient of not larger than 1&#xd7;10cm/sec in a depth range of greater than 20 &#x3bc;m up to 100 &#x3bc;m, from the surface, when leaving to stand at 1050&#xb0; C. in air for 24 hours. The glass is made by cristobalitizing powdery silica raw material; then, fusing the cristobalitized silica material in a non-reducing atmosphere. The glass exhibits a high transmittance of ultraviolet, visible and infrared rays, has high purity and heat resistance, and exhibits a reduced diffusion rate of metal impurities, therefore, it is suitable for various optical goods, semiconductor-production apparatus members, and liquid crystal display production apparatus members.

Fused silica glass and process for producing the same

A cathode of sufficiently low hydrogen overvoltage is provided which is useful in electrolysis of water or of an aqueous alkali metal chloride solution such as a sodium chloride solution. A process for producing the cathode is also provided. The low hydrogen overvoltage cathode has an electroconductive base material coated with an alloy layer containing nickel and molybdenum, the alloy layer containing the nickel at a content ranging from 35 to 90% by weight and the molybdenum at a content ranging from 10 to 65% by weight. The alloy laser has an X-ray diffraction (CuK.alpha. line) pattern with a main peak at an angle ranging from 42 to 45.degree. with a peak half width ranging from 0.4 to 7.degree.. One process for producing the low hydrogen overvoltage cathode of the present invention involves plating an electroconductive base material by an arc discharge type ion plating method. Another process for producing the low hydrogen overvoltage cathode of the present invention involves co-electrodepositing nickel and molybdenum onto an electroconductive base material in a plating bath.

Low hydrogen overvoltage cathode and process for the production thereof

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Shunan, Japan

Hideharu Horikoshi