Kabushiki Kaisha Toshiba

Hidefumi Yasuda

Yuko Kato

Kazuyoshi Furukawa

Toshiyuki Terada

Koji Asakawa

Ryota Kitagawa

Akira Fujimoto

Takeyuki Suzuki

Yasuhiko Akaike

Yasuharu Sugawara

Yoshiaki Sugizaki

Akihiro Kojima

Takayoshi Fujii

Yosuke Akimoto

Hideo Tamura

Kazuhito Higuchi

Susumu Obata

Taisuke Sato

Nozomu Takahashi

Toshitake Kitagawa

Kazufumi Shiozawa

Tomoko Morioka

Kazuhiro Ikezawa

Mayumi Tomita

According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer and a second insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface in a region including the light emitting layer. The n-side electrode is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal exposed from the second insulating layer at a third surface having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal exposed from the second insulating layer at the third surface.

Light emitting device, light emitting module, and method for manufacturing light emitting device

According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body.

Semiconductor light emitting device

One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.

Semiconductor light-emitting device and process for production thereof

According to one embodiment, a semiconductor light emitting device includes a substrate, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a translucent electrode. The substrate includes a first region provided along periphery of a first major surface and a second region provided on center side of the first major surface as viewed from the first region. The first semiconductor layer is provided on the first major surface of the substrate. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The translucent electrode is provided on the second semiconductor layer. A reflectance in the second region is higher than a reflectance in the first region.

Semiconductor light emitting device and method for manufacturing semiconductor light emitting device

A semiconductor light emitting device includes: a support substrate; a metal layer provided on the support substrate; a semiconductor layer provided on the metal layer and including a light emitting layer; a contact layer containing a semiconductor, selectively provided between the semiconductor layer and the metal layer, and being in contact with the semiconductor layer and the metal layer; and an insulating film provided between the semiconductor layer and the metal layer at a position not overlapping the contact layer.

Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device includes: a semiconductor laminated body including a light emitting layer and having a light extraction surface for light emitted from the light emitting layer, a conductive film provided on the light extraction surface of the semiconductor laminated body and being translucent to the light emitted from the light emitting layer and an electrode provided above the conductive film. The conductive film has at least two levels of thickness.

Semiconductor light emitting device and apparatus having a translucent conductive film

A semiconductor light emitting device comprises: a semiconductor laminated body; an electrode provided on the first major surface of the semiconductor laminated body; and a reflecting layer provided on the second major surface side of the semiconductor laminated body. The semiconductor laminated body includes a light emitting layer and having a first major surface and a second major surface located on the opposite side of the first major surface. A light emitted from the light emitting layer is extracted from the first major surface. The reflecting layer is conductive and reflective of the light emitted from the light emitting layer. At least a portion of the reflecting layer, which is opposed to the electrode, has irregularities.

Semiconductor light emitting device and method of manufacturing same and semiconductor light emitting apparatus

A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.

A semiconductor light emitting device comprises: a substrate having first and second major surfaces; a light emitting layer provided in a first portion on the first major surface of the substrate; a first electrode provided above the light emitting layer; a second electrode provided in a second portion on the first major surface of the substrate, the second portion being different from the first portion; and a protrusion provided on the second major surface of the substrate, the protrusion having a planar shape that reflects a planar shape of a light emitting area of the light emitting layer, the light emitting area being sandwiched between the first electrode and the second electrode and facing the protrusion.

Semiconductor light emitting device and method of manufacturing the same

A semiconductor device having an inter-layer insulation film that allows a refractory metal to be easily etched and that well covers high side walls of a gold plate and a fabrication method thereof are disclosed. The semiconductor device comprises a semiconductor substrate, a conductive portion formed on the semiconductor substrate, a metal film formed on the conductive portion, a gold plate portion formed on the metal film, an inter-layer insulation film formed on an area of the semiconductor substrate, the area being free from the conductive portion, the metal film, and the gold plate portion in such a manner that the inter-layer insulation film contacts side walls of the conductive portion, the metal film, and the gold plate portion, a refractory metal film formed in such a manner that the refractory metal film coats the gold plate portion, and a protection film formed in such a manner that the protection film exposes part of the refractory metal film as an electrically connecting portion and coats the inter-layer insulation film and the refractory metal film.

Growing community of inventors

Kanagawa-ken, Japan

Hidefumi Yasuda