Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Engineering Co., Ltd.

Hidefumi Ibe

Tadanobu Toba

Makoto Nagase

Hitoshi Taniguchi

Kenichi Shimbo

Shunsuke Uchida

Yamato Asakura

Masanori Sakai

Makoto Hayashi

Hideki Osaka

Tetsuya Matsui

Katsumi Ohsumi

Noriyuki Ohnaka

Hiroshi Kamimura

Yasuo Yahagi

Yasuko Aoki

Takashi Saito

Izumi Yamada

Kenji Yokose

Hironaru Yamaguchi

Kiyotomo Nakata

Masanori Takahashi

Yoshitaka Nishino

Masao Kitamura

Kazuhiko Akamine

Naoki Yamagami

Ken-ichi Shimbo

Ryoei Katsura

Hideaki Kameyama

Norio Nakayama

Ken-Ichi Shimbo

A simulation apparatus includes a discrete events simulation section to perform a discrete type simulation of components of a configured model as defined based on attribute information that is information on parts of the components of the defined configured model and connection information showing a connectional relationship among the components of the defined configured model; and a soft error rate computation processing section to compute a soft error rate of the defined configured model based on the simulation result of the discrete events simulation section and data on soft error rates in the attribute information.

Simulation apparatus and simulation method for determining soft error rates for a configured model

A failure caused by a soft-error including MNU, of an electronic apparatus is prevented, while suppressing increase of a mounting area, power consumption, and processing time. The electronic apparatus stores data indicating the state of a flip-flop included in a sequential logic circuit within an arithmetic unit, each time when execution is performed on a check point provided for every predetermined number of instructions. When a symptom of a soft-error is detected, the apparatus sets the state of the flip-flop included in the sequential logic circuit within the arithmetic unit, based on the data stored after execution of the instruction at the immediately preceding check point, and restarts execution from the next instruction, being subsequent to the instruction associated with the immediately preceding check point.

Electronic apparatus

A logic block grouphaving at least one set including a logic block having at least one logic circuit and a sequential circuit that inputs the output of the logic block is arranged in an irradiation regionof a high-energy particle irradiation device, and subjected to irradiation with high-energy particles. A control sectioncalculates the error rate of the logic circuit from the value obtained by subtracting the number of errors of the sequential circuit when the logic block of the logic block groupis bypassed, from the number of errors of the sequential circuit and the logic block of the logic block group

Measurement device and measurement method

Spectrum data of white neutrons having different spectrum shapes, and SEE counts obtained by a white neutron method using this multiple spectrum data, are stored. A computing section reads out the spectrum data, divides the data into energy groups, and calculates and stores a total flux of each energy group. Furthermore, the computing section reads out the SEE counts with respect to each of the spectrum data and the total flux of each energy group, substitutes the SEE counts and the total flux into a simultaneous equation, and calculates the SEE cross section for each of the energy groups. Subsequently, the computing section calculates parameters which determine a formula of the approximate function of the SEE cross section as a function of energy, so that computed values of error counts obtained by integration of multiple spectra and the approximate function sufficiently match the actual measured values thereof.

Method for evaluating semiconductor device error and system for supporting the same

Analyzer/observer

A water chemistry factor which is specific to a specific portion of a primary cooling system and universal is decided to be a standard target. The concentration of an agent for mitigating corrosion damage of structural material of the primary cooling system is controlled so that the target will be in a desirable range. All sensor groups provided in the primary cooling system are separated into sensor groups in different lines, of which a specific sensor group are connected to an arithmetic unit and a data base and are for always monitoring a plant process. For example, concentration distribution agreed with measured value oxidation component in the reactor water at the measurement points is selected from the data base, and it is used to estimate the standard target.

Nuclear power plant having a water chemistry control system for a

This invention concerns a plant diagnosis apparatus which comprises a first detecting unit for detecting a state of devices constituting a circulating system in which a fluid circulates and a second detecting unit for detecting a quality of the above-mentioned circulating fluid or a quality of the atmosphere surrounding the above-mentioned circulating system, and a unit for diagnosing the circulating system by output of the first and second detecting units, and therefore can diagnose anomaly of facilities such as a nuclear power plant with high reliability and rapidity.

Plant diagnosis apparatus and method

An element (e.g., a sensor) has a fine-line thin film of a conductor formed on a non-conductive substrate, and a change of physical properties (e.g., deformation) of the substrate or the ambient environment is detected through a change in physical properties of the conductor. The element is manufactured by forming a layered film, composed of a semiconductor and a conductor, on the substrate, and forcibly diffusing part of this film, e.g., by selective irradiation with high-energy ions, to form this part into an alloy semi-conductor, thereby providing a two-dimensional pattern of the fine lines of the conductor and the semiconductor. By arranging a plurality of fine lines of a conductor transversely to a direction of growth of a crack in the substrate, crack in the substrate is detected through a change in electrical resistance of the fine lines. A dissolved oxygen sensor, a hydrogen sensor, and an electrical conductivity sensor (of an ambient medium) can also be provided. To control water chemistry of a reactor, an amount of a water chemistry improving agent injected is controlled in accordance with an output of a water chemistry measurement sensor provided in water in a pressure vessel of the reactor. One or more of a dissolved oxygen sensor, a hydrogen sensor and an electrical conductivity sensor are formed directly on a surface of a structural material of the reactor.

Sensor for controlling water quality of reactor and method of

Two dissolved gas components in sample water, for example, oxygen and hydrogen in core water, are readily quantitatively determined in one and same membrane-type oxygen meter by using a membrane producing an overlapped potential region where a potential region for an oxidation limiting current plateau is overlapped with that for a reduction limiting current plateau between two dissolved gas components, and applying to between a pair of an electrode and a counter-electrode a more positive potential than the equilibrium potential for oxidation-reduction reaction of one of the two dissolved gas components principally, thereby measuring a current generated between the electrodes, and a more negative potential than the equilibrium potential for oxidation-reduction reaction of the other dissolved gas component, when desired, thereby measuring a current generated between the electrodes, and quantitatively determining a concentration of the first dissolved gas component from the latter current quantity and quantitatively determining a concentration of the other dissolved gas component from a difference between the said two current quantities.

Method and apparatus for measuring dissolved gas concentrations

A plurality of sampling tubes are connected with a selector valve and the selector valve selects one of the sampling tubes so that the sample gas is lead through the selected sampling tube and a pipe way downstream of the selector valve to a leakage detection system. The pipe way is provided with a gas flushing section for flushing with high pressure gas and the gas flushing operation is performed before each change-over of the selector valve. The flow of sucked gas is kept constant by providing a gas flow control device downstream of the leakage detection section. A pressure sensor is provided for the pipe way leading to the detection section, to detect the gas pressure in the pipe way and the output of the pressure sensor is used to detect an abnormality occurring in the detection section inclusive of the pipe way thereto and also to correct the output of the pressure detector in the detection section.

Sodium leakage detection system and method of controlling the same

Disclosed is a sodium ionization detector (SID) for detecting sodium leaks by detecting the magnitude of fluctuation of the ion current produced by thermally ionizing sodium. There is a particular relationship between the magnitude of fluctuation of the ion current and the concentration of sodium. The sodium ionization detector is adapted to determine the magnitude of fluctuation of the ion current so as to compare it with a predetermined value. The magnitude of fluctuation of the ion current is determined, for example, by the root-mean-square value of a fluctuation component of the ion current.

Sodium ionization detector

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Kawasaki, Japan

Hidefumi Ibe