Ulvac, Inc.

Hideaki Zama

Kazuhiro Honda

Michio Ishikawa

Takumi Kadota

Chihiro Hasegawa

Shuji Osono

Tadamasa Kobayashi

Mikio Watanabe

A method for manufacturing a semiconductor device includes forming a semiconductor layer including an oxide semiconductor as a main component and forming an insulator layer on a surface of the semiconductor layer. The insulator layer includes silicon oside as a main component and has a hydrogen atom concentration that is less than or equal to 1&#xd7;10atoms/cm.

Method for manufacturing semiconductor device using plasma CVD process

A radiological image conversion panel, having a phosphor layer containing therein a fluorescent substance which emits light through radiation exposure, is manufactured by forming the fluorescent substance into respective columnar structures on one of surfaces of a substrate to thereby obtain a phosphor layer made up of a group of columnar structures. The panel is subsequently manufactured by forming reflection films by respectively covering an outer surface of each of the columnar structures with a reflection film while leaving a gap between respective adjoining columnar structures, the reflection film being arranged to reflect light of a predetermined wavelength. In case a refractive index of the gap is lower than a refractive index of the columnar structures, the reflection films are formed of an inorganic material having a higher refractive index than the refractive index of the columnar structures.

Method of manufacturing radiological image conversion panel and radiological image conversion panel

Disclosed is a method for manufacturing a semiconductor device which is decreased in resistance of a copper wiring containing a ruthenium-containing film and a copper-containing film, thereby having improved reliability. Also disclosed is an apparatus for manufacturing a semiconductor device. Specifically, an Ru film is formed on a substrate having a recessed portion by a CVD method using a raw material containing an organic ruthenium complex represented by the general formula and a reducing gas (step S). Then, a Cu film is formed on the Ru film by a CVD method using a raw material containing an organic copper complex represented by the general formula and a reducing gas, thereby forming a copper wiring containing the Ru film and the Cu film in the recessed portion (step S).

Method for manufacturing semiconductor device

A method of forming a primary coat, which consists of a V- or Ti-containing film, formed on the surface of a subject on which holes or the like have been formed, according to the CVD technique, while using, for instance, a tetravalent amide-type vanadium-containing organometal compound as a raw gas and using, for instance, tertiary butyl hydrazine as a reducing gas, and a copper-containing film is then formed on the primary coat, according to the CVD technique, to thus fill the holes or the like with the copper-containing film and to thus form copper distributing wire, which is excellent in the hole-filling properties and excellent in the adhesion to a primary coat, this process can be applied to the field of copper distributing wires used in the semiconductor industries.

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Chigasaki, Japan

Hideaki Zama