Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Hideaki Yoshida

Masashi Hamanaka

Tetsuya Ueda

Takeshi Harada

Mitsunari Satake

After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, respective foreign matters adhered to a polishing pad and to a surface to be polished during polishing are removed and then a surface of the anti-reflection film is polished.

Method for forming wiring structure

After a plurality of grooves are formed in an insulating film, a barrier metal film and a conductive film are deposited successively on the insulating film such that each of the grooves is filled completely therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, a foreign matter adhered to the surface to be polished during polishing is removed and then a surface of the insulating film is polished.

After a plurality of grooves are formed in an insulating film and in an antireflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the grooves is filled. Subsequently, the portions of the conductive film outside the grooves are removed by a first polishing step and then the portions of the barrier metal film outside the grooves are removed by polishing. Thereafter, foreign matter adhered to the surface of the anti-reflection film is removed and a third polishing step is conducted on the surface of the anti-reflection film using an abrasive agent of the same type as used in the first polishing step of the conductive film.

After forming a groove in a surface portion of a substrate, a deposited film is formed on the substrate so as to fill the groove. The deposited film is subjected to a first stage of chemical mechanical polishing with a relatively high rotation speed and a relatively low pressure, so as to eliminate an initial level difference formed in the deposited film due to the groove. After eliminating the initial level difference, the deposited film is subjected to a second stage of the chemical mechanical polishing with a relatively low rotation speed and a relatively high pressure, so as to remove a portion of the deposited film present outside the groove.

Method for planarizing deposited film

After a plurality of grooves are formed in an insulating film and in an anti-reflection film on the insulating film, a barrier metal film and a conductive film are deposited on the anti-reflection film such that each of the wiring grooves is filled therewith. Subsequently, the portions of the conductive film outside the grooves are removed by polishing and then the portions of the barrier metal film outside the wiring are removed by polishing. Thereafter, a foreign matter adhered to a surface to be polished during polishing is removed and then a surface of the anti-reflection film is polished.

Holes are formed in a first insulating film deposited on a substrate. After depositing a first conducting film over the first insulating film including the holes, the first conducting film is subjected to first CMP, so as to form plugs from the first conducting film. Next, the first insulating film is subjected to second CMP with a polishing rate of the first insulating film higher than a polishing rate of the first conducting film, so as to planarize the first insulating film by eliminating erosion caused in a region of the first insulating film where the plugs are densely formed. After depositing a second insulating film on the planarized first insulating film, interconnect grooves are formed in the second insulating film. After depositing a second conducting film over the second insulating film including the interconnect grooves, the second conducting film is subjected to third CMP, so as to form buried interconnects from the second conducting film.

Method for forming buried interconnect

A polishing pad is fixed on a polishing platen mounted to be rotatable. An abrasive supply tube supplies an abrasive onto the polishing pad. A substrate holder is mounted to be rotatable above the polishing pad, holds a substrate to be polished and presses the substrate against the polishing pad, thereby polishing the substrate. A dresser is mounted to be rotatable above the polishing pad, and dresses the polishing pad. A torque detector detects the rotation torque of the polishing platen or the rotation torque of the substrate holder. A dresser controller makes the dresser dress the polishing pad if the rotation torque detected by the torque detector is equal to or smaller than a predetermined value.

Growing community of inventors

Osaka, Japan

Hideaki Yoshida