Rohm Co., Ltd.

Flosfia Inc.

Hideaki Yanagida

Kazuisao Tsuruda

Yoshihisa Takada

Isamu Nishimura

Yasuhiro Fuwa

Mamoru Yamagami

Takashi Shinohe

Michihiko Mifuji

Toshikazu Mukai

Jaeyoung Kim

Mitsuru Okigawa

Hirofumi Takeda

Taro Hayashi

Natsuki Sakamoto

Takafumi Okada

The present disclosure provides an electronic device. The electronic device includes a first resin layer, having a first resin layer main surface and a first resin layer inner surface; a first conductor, having a first conductor main surface and a first conductor inner surface; a first wiring layer, formed adjacent to the first resin layer main surface and connected to the first conductor main surface; a first electronic component, electrically connected with the first wiring layer; a second resin layer, having a second resin layer main surface facing same direction as the first resin layer main surface and a second resin layer inner surface being in contact with the first resin layer main surface; an external electrode; and a second conductor, penetrating the second resin layer, wherein the second conductor is disposed on a periphery of the first electronic component.

Electronic device with multiple resin layers reducing suppression in reliability

A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Semiconductor device with improved internal and external electrode structure

A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

Terahertz device and production method for terahertz device

An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.

Semiconductor device

Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. Terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor. Terahertz element is conductively bonded to wiring layer.

Terahertz device and method for manufacturing terahertz device

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Terminal configuration and semiconductor device

An electronic device includes: a first resin layer having a first resin layer main surface and a first resin layer inner surface; a columnar conductor having a columnar conductor main surface and a columnar conductor inner surface and penetrating the first resin layer in direction z; a wiring layer connecting the first resin layer main surface and the first conductor main surface; an electronic component being electrically connected and joined to the wiring layer; a second resin layer having a second resin layer main surface facing the same direction as the first resin layer main surface and a second resin layer inner surface being in contact with the first resin layer main surface, covering the wiring layer and the electronic component; and an external electrode closer to the side where the first resin layer inner surface faces than the first resin layer and is electrically connected to the columnar conductor.

Electronic device having supporting resin and manufacturing method thereof

Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. The terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor.

A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

An electronic component includes a substrate which has a first major surface on one side and a second major surface on the other side, a chip which has a mounting surface on one side and a non-mounting surface on the other side and is disposed on the first major surface of the substrate in a posture that the mounting surface faces the first major surface of the substrate, a sealing insulation layer which seals the chip so as to expose the non-mounting surface above the first major surface of the substrate, and a cover layer which covers the non-mounting surface of the chip.

Electronic component and manufacturing method thereof

A multi-chip module includes a plurality of chip parts with each chip part having an electrode, a sealing resin for sealing the plurality of chip parts, and an external connection terminal secured to the sealing resin so as to be exposed from the outer surface of the sealing resin and electrically connected to the electrode of at least one of the chip parts.

Multi-chip module and method for manufacturing same

A semiconductor device includes an electroconductive shielding layer, an isolation layer formed with a frame-shaped opening, a wiring layer on the isolation layer to be surrounded by the opening, a semiconductor element on the wiring layer with its back surface facing the wiring layer, electroconductive pillars spaced apart from the semiconductor element and standing on the wiring layer, and an electroconductive frame standing on an exposed region of the shielding layer through the opening, with the frame surrounding the semiconductor element and the electroconductive pillars. The semiconductor device further includes an electrically insulating sealing resin that covers the wiring layer and the semiconductor element, and the frame is configured to be electrically connected to an external ground terminal.

Semiconductor device and method for manufacturing the same

A semiconductor device includes a substrate with a recess subsiding from a selected surface of the substrate to accommodate a semiconductor element. Connected to the semiconductor element, an electroconductive portion extends from the recess onto the selected surface. A post, formed at the selected surface, has a first surface in contact with the electroconductive portion, a second surface, and a side surface between the first and second surfaces. A sealing resin covers the side surface of the post and the semiconductor element, and has a mounting surface facing in the same direction as the selected surface of the substrate. A pad, on the mounting surface of the sealing resin, is in contact with the second surface of the post. In the thickness direction, the second surface of the post is offset from the mounting surface of the sealing resin toward the selected surface of the substrate.

The present disclosure provides an electronic device suitable for miniaturization. The present electronic device includes: a substrate (), having a main surface () and a back surface () facing opposite sides with each other in a thickness direction, wherein the substrate comprises a semiconductor material; an electronic component (), which is disposed over the substrate (); and a conductive layer (), which is electrically connected with the electronic component (); wherein a recess for disposing the component () and a through recess () are formed in the substrate, in which recess for disposing the component () is recessed from the main surface (), and the through recess () penetrates from the recess for disposing the component () to the back surface (); the electronic component () is disposed over the recess for disposing the component (); a metal-filled portion () is formed in the through recess (), wherein the metal-filled portion blocks at least the bottom of the through recess () and is filled with a metal material; and the conductive layer () is formed at least from the through recess () to the back surface ().

Growing community of inventors

Kyoto, Japan

Hideaki Yanagida