Hitachi, Ltd.

Nippon Telegraph and Telephone Public Corporation

Nippon Hoso' Kyokai

Other

Hitachi Displays, Ltd.

Hitahci, Ltd.

Hideaki Yamamoto

Toshihisa Tsukada

Haruo Matsumaru

Akira Sasano

Yasuo Tanaka

Eiichi Maruyama

Kazuo Shirahashi

Hitoshi Kume

Satoshi Meguro

Kazuhiro Komori

Yuka Matsukawa

Tadaaki Hirai

Toru Baji

Ken Tsutsui

Takaaki Hagiwara

Yukio Takasaki

Mitsuo Nakatani

Toshiaki Nishimoto

Norio Koike

Hideaki Taniguchi

Yasuharu Shimomoto

Michio Tsukii

Ryoji Oritsuki

Saburo Oikawa

Makoto Matsui

Tetsuaki Suzuki

Toshihiro Tanaka

Toshiki Kaneko

Toshio Nakano

Yoshiyuki Kaneko

Koichi Seki

Kenichi Onisawa

Junichi Ohwada

Sachio Ishioka

Naohiro Goto

Yoshiaki Mori

Tomoaki Takahashi

Hideto Kanamori

Kikuo Ono

Motoyasu Terao

Susumu Saito

Takahiro Ochiai

Minoru Yoshida

Hiroshi Sasaki

Iwao Takemoto

Tetsuhiko Takahashi

Kouichi Anno

Masaharu Kubo

Nobutake Konishi

Takeshi Wada

Tetsuo Adachi

Takashi Suzuki

Yoshizumi Eto

Shinkichi Horigome

Kenji Maio

Shusaku Nagahara

Masahiko Suzuki

Keiichi Shidara

Masaru Takabatake

Toshikazu Shimada

Hiroaki Asuma

Tadashi Muto

Haruhisa Ando

Masahiro Yamada

Takuya Takahashi

Kenichi Okajima

Katsumi Tamura

Yoichi Takahara

Masatomo Terakado

Tsutomu Sato

Tsutomu Fujita

Haruo Itoh

Kuniyuki Matsunaga

Kiyofumi Uchibori

Susumu Niwa

Kiyohisa Inao

Kouichi Seki

Yuichi Harano

Shoji Asaka

Toru Takigawa

Toshiko Koizumi

Eizou Ebisui

Noriyuki Ohroku

Kenichi Cyahara

Hirosh Takeuch

Toshihisa Tsukuda

Keiko Ooki

Hiroshi Kawanago

Hiroya Inagaki

Akio Taniguchi

Yuji Izawa

Hisao Ohta

Naohiko Koizumi

Sakari Kaneku

A cleaning apparatus according to the present invention is provided with a brush drive mechanism which brings a brush being rotating closer to a substrate, measures electrical potentials generated on a plurality of conductor patterns formed on the substrate, by a contact and separation with/from tips of scrub materials of the brush being rotating, and controls a positioning of the brush by use of the measurement results. With the process as described above, it is possible to treat uniformly a surface to-be-cleaned for a large-sized substrate, with the cleaning brush. Consequently, it is possible to form a highly qualified transistor for liquid crystal display on the substrate having been cleaned, with enhancing yield.

Surface treatment apparatus and method for manufacturing liquid crystal display device

A method of manufacturing an LCD device which includes a gate line having an effective display area which includes an aluminum alloy layer and an aluminum oxide layer. The gate line also includes a gate terminal portion which is made up of the same aluminum alloy layer with a molybdenum alloy layer formed thereon. To form this structure, an insulating substrate of the LCD device, with the laminated structure of the aluminum alloy layer and the molybdenum layer, is immersed in an electrolytic solution. During the immersion, the molybdenum layer is etched off the aluminum alloy in the effective displaying area, while the etching is prevented in the gate terminal area by a protective layer. Following this, the aluminum oxide layer is formed over the aluminum alloy in the effected display area while the device is still immersed in the electrolytic solution.

Liquid crystal display device, manufacturing method thereof, and fabrication apparatus therefor

The method of fabrication of a liquid crystal display device includes the steps of: forming a metal thin film on a glass substrate; forming a resist pattern on the metal thin film by photolithography; and wet-etching the metal thin film with an etchant formed of a mixture including phosphoric acid, nitric acid in a range between 7 mol % and 12 mol % inclusive, and at least one of ammonium fluoride and hydrogen fluoride in a trace amount of about 0.01 to 0.1 mol %.

Liquid crystal display device and method of manufacturing the same

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al&mdash;Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal line or video signal line

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

Thin film transistor substrate, manufacturing method thereof, liquid

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal

An active matrix liquid crystal display comprises a first substrate, a second substrate, and liquid crystal held therebetween. The first substrate includes on one surface, a plurality of gate lines, a plurality of drain lines crossing the gate lines, and transistors each disposed in the vicinity of crossing points between the gate lines and the drain lines. Source electrodes of the transistors are each connected to pixel electrodes each disposed in the vicinity of the source electrodes. The drain electrodes of the transistors are connected to one of a plurality of the drain lines while the gate electrodes of the transistors are connected to one of a plurality of the gate lines. The second substrate is disposed in such a manner as to face to the first substrate and to have facing electrodes on the surface facing to the pixel electrodes. In such a liquid crystal display, either a plurality of the gate lines or a plurality of the drain lines are made of a Cr alloy containing at least one kind selected from a group consisting of Mo, Nb, Ta and W.

Active matrix liquid crystal display in which the gate and/or drain

In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).

The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.

LCD device with TFTs in which pixel electrodes are formed in the same

An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively. Subsequently, the ITO pixel electrode is formed on the same plane as that of the first conductive layer, corresponding to the gate electrode and plate electrode of capacitor Cadd, and is followed by the formation of a relatively thicker second insulating layer, for example, a nitride insulating layer, on the first insulating layer, namely, the anodized oxide film, and on the pixel electrode. In accordance with this scheme, furthermore, the first insulating layer is formed by anodizing the metal layer constituting the first conductive layer.

Method for making LCD device in which gate insulator of TFT is formed

This invention discloses EEPROM which increases an erasing voltage V.sub.pp to be applied in a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in order to improve erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carrier be easily generated and to improve writing efficiency.

Method of making an EPROM with peripheral transistor

An EEPROM (Electrically Erasable Programmable Read Only Memory) has a structure in which the corners of a floating gate electrode of each memory cell MISFET near the source region thereof are rounded. The EEPROM is manufactured by a method characterized in that the ions of an impurity at a high dose are implanted in self-alignment with the floating gate electrode and control gate electrode of the memory cell MISFET so as to form the source and drain regions thereof, whereupon an oxidizing treatment is carried out.

Semiconductor integrated circuit device and method of manufacturing the

A method of manufacturing a liquid crystal display substrate, comprising the step of checking the disconnection of a wiring layer formed on a liquid crystal side face of at least one of the transparent substrates which are arranged to confront each other through a liquid crystal. There is added the step of repairing the disconnection by attaching a conductive material to the disconnected portion of the wiring layer. Thus, the disconnection can be repaired remarkably easily and reliably.

Method of repairing a signal line open circuit by connecting each side

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Growing community of inventors

Tokorozawa, Japan

Hideaki Yamamoto