National Institute of Advanced Industrial Science and Technology

Hideaki Yamada

Akiyoshi Chayahara

Yoshiaki Mokuno

Shinya Ohmagari

Akinori Seki

Shinichi Shikata

Nobuteru Tsubouchi

Hiroaki Saitoh

Hitoshi Umezawa

Fumiaki Kawai

A microwave plasma treatment device includes a resonator including a container; a single microwave oscillation source that outputs a reference microwave; a waveguide that connects the microwave oscillation source and the resonator to each other; and a phase control mechanism that generates a modified microwave having a phase different from a phase of the reference microwave by controlling the phase of the reference microwave. The resonator includes one or more first-type introducing portions for introducing the reference microwave into the resonator and one or more second-type introducing portions for introducing the modified microwave into the resonator, and the microwave plasma treatment device is configured such that at least one of a position, a size, and a shape of a plasma ball generated in the container is changed by superimposing the modified microwave on the reference microwave in the resonator.

Microwave plasma treatment device

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 &#x3bc;m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Stack comprising single-crystal diamond substrate

Provided is a single crystal diamond having a lowered dislocation density. The single crystal diamond () is provided with single crystal diamond layers (). One single crystal diamond layer () is formed on a diamond substrate () and contains point defects. The other single crystal diamond layer () is grown on the single crystal diamond layer (). The single crystal diamond layers () have a lower dislocation density than the diamond substrate.

Single crystal diamond and semiconductor element using same

The present invention provides a method for separating a surface layer of a diamond, which comprises implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in an electrolytic solution; and a method for separating a grown layer of a diamond, which further comprises the step of growing a diamond by a vapor-phase synthesis method, after forming a non-diamond layer according to the above-described method. The invention is applicable to various single-crystal and polycrystal diamonds. More specifically, even with a large single-crystal diamond, a portion of the single-crystal diamond can be efficiently separated in a reusable form in a relatively short period of time.

Method for separating surface layer or growth layer of diamond

The present invention provides a method for producing a large substrate of single-crystal diamond, including the steps of preparing a plurality of single-crystal diamond layers separated form an identical parent substrate, placing the single-crystal diamond layers in a mosaic pattern on a flat support, and growing a single-crystal diamond by a vapor-phase synthesis method on faces of the single-crystal diamond layers where they have been separated from the parent substrate. According to the method of the invention, a mosaic single-crystal diamond having a large area and good quality can be produced relatively easily.

Growing community of inventors

Ikeda, Japan

Hideaki Yamada