Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Hideaki Togashi

Fumihiko Koga

Shintarou Hirata

Yoshihiro Ando

Shinpei Fukuoka

Tetsuji Yamaguchi

Masahiro Joei

Taiichiro Watanabe

Yukio Kaneda

Kenichi Murata

Nobuhiro Kawai

Akira Furukawa

Yosuke Saito

Iwao Yagi

Takayuki Enomoto

Toyotaka Kataoka

Satoshi Keino

Sho Nishida

Masashi Nakata

Naoyuki Sato

Keisuke Hatano

Junpei Yamamoto

Takushi Shigetoshi

Moe Takeo

Yoshito Nagashima

Kyosuke Ito

Hideo Kido

Yuta Hasegawa

Koji Sekiguchi

Shingo Takahashi

Kosuke Nakanishi

Yusaku Sugimori

Kaori Takimoto

Masahiro Segami

Kei Nakagawa

Yusuke Murakawa

Hiroki Iwashita

Mikio Ishimaru

Yasumasa Akutagawa

Taku Minoda

Takahito Niwa

Provided is a solid-state image capturing element including a semiconductor substrate and first and second photoelectric conversion parts configured to convert light into electric charge. The first and the second photoelectric conversion parts each have a laminated structure including an upper electrode, a lower electrode, a photoelectric conversion film sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film. The lower electrode of each of the first and the second photoelectric conversion parts is electrically connected with a common electric charge accumulation part through a common penetration electrode provided in common to the first and the second photoelectric conversion parts and penetrating through the semiconductor substrate, the common electric charge accumulation part being provided in common to the first and the second photoelectric conversion parts in the semiconductor substrate.

Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method

An imaging element includes a photoelectric conversion unit including a first electrode, a photoelectric conversion layer, and a second electrodethat are stacked, in which the photoelectric conversion unit further includes a charge storage electrodearranged apart from the first electrodeand arranged to face the photoelectric conversion layerthrough an insulating layer, and when photoelectric conversion occurs in the photoelectric conversion layerafter light enters the photoelectric conversion layer, an absolute value of a potential applied to a partof the photoelectric conversion layerfacing the charge storage electrodeis a value larger than an absolute value of a potential applied to a regionof the photoelectric conversion layerpositioned between the imaging element and an adjacent imaging element.

Imaging element, stacked imaging element, and solid-state imaging apparatus

A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

Semiconductor device, method of manufacturing a semiconductor device, solid-state imaging device, and electronic apparatus

A read-out speed is increased. A solid-state imaging device () according to an embodiment is a solid-state imaging device including a plurality of photoelectric conversion elements (PD) arrayed in a matrix, and each of the photoelectric conversion elements includes: a first electrode and a second electrode () that are disposed such that principal planes thereof face each other; a photoelectric conversion film () that is disposed between the first electrode and the second electrode; a semiconductor layer () that is disposed between the photoelectric conversion film and the second electrode and is configured such that a first surface is in contact with the photoelectric conversion film and at least a portion of a second surface on a side opposite to the first surface is in contact with the second electrode; an insulating film () that is disposed within the semiconductor layer; and a third electrode () that is disposed within the insulating film.

Solid-state imaging device and electronic equipment

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nphotoelectric conversion unit segment is formed of an ncharge storage electrode segment, an ninsulating layer segment and an nphotoelectric conversion layer segment. As n increases, the nphotoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nphotoelectric conversion unit segment.

Imaging element, stacked-type imaging element and solid-state imaging apparatus

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode. The stacked structure includes a first electrode, a first photoelectric conversion layer, and a second electrode that are stacked in order, and the electric charge accumulation electrode is disposed to be separated from the first electrode and be opposed to the first photoelectric conversion layer with an insulating layer interposed therebetween.

Photoelectric conversion element, photodetector, photodetection system, electronic apparatus, and mobile body

Imaging devices and ranging devices are disclosed. In one example, an imaging device includes a semiconductor substrate, a first pixel array, a second pixel array, and a control unit. In the first pixel array, a first light receiving pixel on the semiconductor substrate has a stacked structure of a first electrode, a photoelectric conversion layer, and a second electrode (). It photoelectrically converts light in a first wavelength region including the visible light region. In the second pixel array, a second light receiving pixel is provided at a position overlapping the first light receiving pixel in a thickness direction of the semiconductor substrate. It photoelectrically converts light in a second wavelength region including the infrared light region. The control unit drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array.

Imaging device and ranging system

A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

Solid-state imaging device and electronic apparatus

Provided is a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections. Further, each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film. Furthermore, the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Solid-state imaging device and electronic apparatus for miniaturization of pixels and improving light detection sensitivity

A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G, and g) of transistors (AMP, RST, TG, and TG) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

Solid-state imaging element, electronic device, and manufacturing method of solid-state imaging element

Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.

Imaging element and imaging device

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Imaging element and imaging apparatus

A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided. There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided stacked with the first photoelectric conversion unit and including a plurality of pixel transistors, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor made of an oxide semiconductor layer.

Solid-state imaging element including a plurality of photoelectric conversion units

A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.

Growing community of inventors

Kanagawa, Japan

Hideaki Togashi