Hitachi, Ltd.

Hitachi Power Solutions Co., Ltd.

Hitachi Kyowa Engineering Co., Ltd.

Toyoda Gosei Co., Ltd.

Hideaki Takemori

Kazuhiro Hirose

Satoshi Higashiyama

Masatoshi Seki

Toru Itagaki

Takeru Fujinaga

Toshiaki Koizumi

Naoki Matsushima

Shohei Hata

Kenji Mori

Teruhisa Akashi

Eiji Sakamoto

Ryoichi Tohmon

Minoru Hirose

Yoshishige Endou

Hiroaki Kawaguchi

Hisashi Aoki

The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

Double-sided circuit non-oxide-based ceramic substrate and method for manufacturing same

A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.

Single crystal silicon carbide substrate, method of manufacturing single crystal silicon carbide substrate, and semiconductor laser

Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

Submount for optical device and its manufacturing method

The optical mounting package of the present invention is featured by mounting a silicon frame on an insulating substrate for mounting the optical element. The package of the present invention is also featured by that the frame mounted on the insulating substrate for mounting the optical element is made of silicon. A method of manufacturing the package of the present invention is featured by mounting the silicon wafer on the insulating substrate.

Package for mounting an optical element and a method of manufacturing the same

A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Submount for light emitting diode and its manufacturing method

A chip mounting substrate for bonding a semiconductor chip to a substrate, comprises a solder layer on the substrate, the solder layer being connectable to a semiconductor chip, wherein the solder layer comprises a layer including &#x3b4;-phase crystal grains of an Au&#x2014;Sn alloy at a surface of the solder layer. The solder layer comprising a layer including &#x3b4;-phase crystal grains of an Au&#x2014;Sn alloy is formed at a surface of the solder layer. On mounting a semiconductor chip on the substrate, the substrate and the solder layer are heated and an image of the solder layer is shot to perform an image evaluation to detect the timing of mounting the semiconductor chip on the solder layer of the substrate and a position of the chip.

Semiconductor chip mounting substrate, a method of producing the same, and a method of mounting a semiconductor chip

An optical element-mounting substrate that makes it easy to optically couple the optical semiconductor element to the optical fiber or to the lens and that can be highly integrated while suppressing deterioration in the high-frequency signals. The optical element-mounting substrate for optically coupling the optical semiconductor element to the optical fiber through the lens, comprises an insulating film formed on the surface of the optical element-mounting substrate, grooves formed on the substrate for installing the optical fiber and the lens, a thin-film electrode formed on the insulating film, a thin-film capacitor and a thin-film temperature sensor arranged maintaining a distance from the thin-film electrode, and a solder film formed on the insulating film in a region where the optical semiconductor element is mounted so as to be electrically connected to the thin-film electrode.

Optical element-mounting substrate and method of producing the same

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Hitachinaka, Japan

Hideaki Takemori