Seiko Epson Corporation

Hideaki Oka

Toshiyuki Kamiya

Hiroki Kawai

Takanobu Matsumoto

Mitsuhiro Yamamura

Satoshi Takenaka

Hajime Kobayashi

Masafumi Kunii

Yasunaga Miyazawa

Juri Kato

Kei Kanemoto

Yasuhiro Shimodaira

Masamitsu Uehara

Toshioki Shimojima

A robot includes a robot body including a base, a first movable section provided turnably with respect to the base, and a second movable section provided turnably with respect to the first movable section, a first proximity sensor for detecting contact with or approach of an object to the first movable section, and a second proximity sensor for detecting contact with or approach of the object to the second movable section. The first proximity sensor includes a first electrode section having a capacitance that changes according to the contact or approach of the object, and a first circuit section for detecting the capacitance of the first electrode section. The second proximity sensor includes a second electrode section having a capacitance that changes according to the contact or approach of the object, and a second circuit section for detecting the capacitance of the second electrode section.

Robot

A robot includes a sensor including an electrode portion of a sensor for detecting approach of or contact with another object is formed on an outer surface or an inner surface of an exterior member, and in which a drive unit of the robot main body is controlled so as to avoid approach between the robot body and the other object based on an output signal of the sensor.

Sensor and robot

A force detection device includes a charge output element that outputs charge in accordance with a received external force, a conversion and output circuit, having a first switching element and a first capacitor, which converts the charge into a voltage and outputs the voltage, a compensation signal output circuit, having a second switching element and a second capacitor, which outputs a compensation signal, and an external force detection circuit that detects an external force on the basis of the voltage which is output from the conversion and output circuit and the compensation signal which is output from the compensation signal output circuit. The capacitance of the second capacitor is smaller than the capacitance of the first capacitor.

Force detection device, robot, and moving object

A sensor device includes a package, a sensor element that is disposed in the package, and a lid that seals the package, in which the sensor element includes a contacting surface that comes in contact with the lid, the package includes a joint surface which is joined to the lid, and the contacting surface and the joint surface are not on the same flat surface.

Sensor device, sensor module, robot and method of manufacturing sensor device

A sensor element is formed by, when an &#x3b1; axis, a &#x3b2; axis orthogonal to the &#x3b1; axis, and a &#x3b3; axis orthogonal to the &#x3b1; axis and the &#x3b2; axis are set, laminating piezoelectric substrates and electrodes in the &#x3b3; axis direction. The sensor element includes connecting sections arranged such that a part of external sections of the electrodes aligns with a part of external sections of the piezoelectric substrates. The connecting sections are arranged not to align with one another in a direction of the &#x3b3; axis. Conductors that electrically connect the connecting sections and external connecting sections are formed along outer peripheral sections of the piezoelectric substrates.

Sensor element, force detecting device, and robot

A sensor device includes a package, a sensor element that is disposed in the package, and a lid that seals the package. The lid includes a flexible portion that surrounds the vicinity of the sensor element in a plan view.

Sensor device, sensor module, force sensing apparatus, and robot

A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

Method for manufacturing semiconductor device

A semiconductor device includes a semiconductor layer formed by epitaxial growth in a first region which is obtained by etching a semiconductor substrate to a predetermined depth, a surface of the semiconductor layer having a same height from the bottom of the semiconductor substrate as a height of a surface of the semiconductor substrate, a buried insulating layer buried between the semiconductor substrate and the semiconductor layer and an element isolation region separating each element region in the semiconductor layer and isolating the semiconductor layer from the semiconductor substrate in plan.

Semiconductor device and manufacturing method thereof

A polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600&deg; C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550&deg; C. to 650&deg; C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20&deg; C./min, preferably about 5&deg; C./min, to a prescribed recrystallization temperature within the range about 550&deg; C. to 650&deg; C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300&deg; C. and preferably between approximately 400&deg; C. to 500&deg; C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

Method of manufacturing semiconductor device by two stage heating of deposited noncrystalline semiconductor

An improved polycrystalline or polysilicon film having large grain size, such as 1 &mgr;m to 2 &mgr;m in diameter or greater, is obtained over the methods of the prior art by initially forming a silicon film, which may be comprised of amorphous silicon or micro-crystalline silicon or contains micro-crystal regions in the amorphous phase, at a low temperature via a chemical vapor deposition (CVD) method, such as by plasma chemical vapor deposition (PCVD) with silane gas diluted with, for example, hydrogen, argon or helium at a temperature, for example, in the range of room temperature to 600&deg; C. This is followed by solid phase recrystallization of the film to form a polycrystalline film which is conducted at a relatively low temperature in the range of about 550&deg; C. to 650&deg; C. in an inert atmosphere, e.g., N or Ar, for a period of about several hours to 40 or more hours wherein the temperature is gradually increased, e.g., at a temperature rise rate below 20&deg; C./min, preferably about 5&deg; C./min, to a prescribed recrystallization temperature within the range about 550&deg; C. to 650&deg; C. Further, between the step of film formation and the step of solid phase recrystallization, the film may be thermally treated at a relatively low temperature, e.g., over 300&deg; C. and preferably between approximately 400&deg; C. to 500&deg; C. for a period of several minutes, such as 30 minutes, to remove hydrogen from the film prior to solid phase recrystallization.

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Minowa, Japan

Hideaki Oka