Fujitsu Corporation

Hideaki Ohtake

Kiyoshi Watanabe

Tohru Takeuchi

Ichiro Fujita

A triple-layer electrode structure or a multilayer interconnecting structure of a semiconductor device comprising a contact (a lower conductive) layer of aluminum or its alloy which comes into contact with a silicon substrate, a barrier layer of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g., tungsten), and a (upper) conductive layer of aluminum or its alloy. The TiN-W barrier layer prevents overdissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature. The barrier layer is formed by sintering a mixture of refractory metal nitride powder and refractory metal powder to form a target which is sputter deposited on the contact layer in an atomsphere excluding gaseous nitrogen.

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Yokohama, Japan

Hideaki Ohtake