Hitachi, Ltd.

Hitachi Ulsi Systems Co., Ltd.

Hideaki Nonami

Shinichiro Wada

Mitsuru Arai

Yoichi Tamaki

Masato Hamamoto

Mitsuri Arai

A semiconductor device includes a lower substrate, a thin semiconductor layer and an insulating layer formed between the lower substrate and the semiconductor layer. An active transistor area is formed with a base formed along a surface of the semiconductor layer, an emitter region formed in the base, a buried collector in the thin semiconductor layer to contact the insulating layer, a collector contacting the buried collector, and emitter, collector and base contacts. The active transistor area is configured to operate at an emitter current at least in the order of mA (milli-ampere). An isolation trench extends through the semiconductor layer to the insulating layer and surrounds the active transistor area with a distance in the order of &#x3bc;m (micron) from the active transistor area and with a space area of more than 50 &#x3bc;mbetween the active transistor area and the isolation trench.

Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation

A semiconductor device having a bipolar transistor improved with heat dissipation. A semiconductor device having bipolar transistors formed in a plurality of device forming regions electrically isolated from each other by device isolation trenches traversing the semiconductor layer, in which a device isolation trench for each of unit bipolar transistors connected in parallel is removed and the plurality of unit bipolar transistors connected in series are entirely surrounded with one device isolation trench.

Semiconductor device

A plurality of the same kind of npn-type bipolar transistors are disposed regularly on a semiconductor layer that is provided over an insulation layer. The plurality of unit bipolar transistors are connected in parallel, thereby to form a plurality of desired bipolar transistors. A deep trench isolation surrounds a group of or the whole of the plurality of unit bipolar transistors that are connected in parallel, for a plurality of desired bipolar transistor that require thermal stability.

Growing community of inventors

Ome, Japan

Hideaki Nonami