Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Nitta Haas Inc.

Hideaki Nishizawa

Selvanathan Arumugam

Allen S Bulick

Koichi Yoshida

Kazuki Moriyama

Shunji Ezawa

A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.

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Kyoto, Japan

Hideaki Nishizawa