Murata Manufacturing Co., Ltd.

Hideaki Nimi

Yukio Sakabe

Atsushi Kishimoto

Akinori Nakayama

Ryouichi Urahara

Terunobu Ishikawa

Masahiro Kodama

A chip-type electronic component is provided in which generation of cracks in a glass coating layer and degradation of the insulating resistance in the ceramic body is unlikely to occur. In addition, a manufacturing method therefor is also provided. In the glass coating layer described above, the ratio of the alkali metal content to the silicon content is gradually increased from the vicinity of the glass coating layer to the inside thereof. The component is formed by forming a glass coating layer on surfaces of the component, in which the ratio of the alkali metal to the silicon in the glass coating layer is 0.3 or more; and a subsequent step of dipping the component provided with the glass coating layer in an acidic aqueous solution.

Chip-type electronic component and manufacturing method therefor

A semiconductive ceramic composition having negative resistance-temperature characteristics, wherein the composition comprises lanthanum cobalt oxide as the primary component, and, as secondary components, at least one oxide of an element selected from B, Fe and Al and at least one oxide of an element selected from Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te, Ce, Nb, Mn, Th and P. A semiconductive ceramic composition having a resistivity of approximately 10 .OMEGA..multidot.cm to 100 .OMEGA..multidot.cm at room temperature is obtained by controlling the amount of additives. Since the resistivity at room temperature can be enhanced to several times or more that of the conventional compositions while characteristics of the conventional compositions are maintained, the composition may be widely applied to control heavy current.

Semiconductive ceramic composition and semiconductive ceramic element

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Hikone, Japan

Hideaki Nimi