Sumitomo Electric Industries, Limited

Toyohashi University of Technology

Seiko Epson Corporation

Koha Co., Ltd.

Nec Corporation

National University Corporation Toyohashi of Technology

Hideaki Nakahata

Akihiro Hachigo

Satoshi Fujii

Michimasa Miyanaga

Kenjiro Higaki

Shin-ichi Shikata

Shinichi Shikata

Naoji Fujimori

Koji Uematsu

Seiji Nakahata

Naho Mizuhara

Katsushi Akita

Shinsuke Fujiwara

Youichi Nagai

Issei Satoh

Hiroyuki Kitabayashi

Tomoki Uemura

Keisuke Tanizaki

Takuji Okahisa

Takahiro Imai

Yoshiyuki Yamamoto

Takashi Ishizuka

Kei Fujii

Kenichi Hirotsu

Yuichiro Seki

Takashi Sakurada

Hiroshi Inada

Yasuhiro Iguchi

Hiromu Shiomi

Takashi Ohira

Shin Hashimoto

Kyohei Yamada

Yoshiki Nishibayashi

Katsuhiro Itakura

Kensaku Motoki

Nobuo Shiga

Ryu Hirota

Kentaro Yoshida

Daiya Egashira

Takao Nakamura

Keiji Ishibashi

Kenji Saito

Takashi Iwasaki

Makoto Kiyama

Akihiko Ikegaya

Hiroshi Amano

Keiichiro Tanabe

Kazumasa Toya

Fumitaka Sato

Tatsuya Tanabe

Satoshi Arakawa

Masashi Narita

Shin-Ichi Shikata

Yasushi Yamamoto

Masaki Ueno

Hiroki Mori

Yoshihiro Takahashi

Hisao Takeuchi

Tomohiro Kawase

Natsuo Tatsumi

Rui Mikami

Yoshiya Abiko

Satoshi Hatsukawa

Kouhei Miura

Daichi Kawaguchi

Manabu Okui

Natsuhiko Sakairi

Naoji Funimori

A transformer is provided between a power supply and a load, and includes a front stage circuit and a rear stage circuit each having a function of performing switching so as to alternately invert a polarity of output relative to input. The transformer further includes: a series unit provided in at least one of both circuits and composed of a pair of reactance elements connected in series to each other via a connection point; and a switch device which, with both ends of the series unit serving as a first port, causes a part between one end of the series unit and the connection point, and a part between the other end of the series unit and the connection point, to serve as a second port alternately through switching while inverting a polarity, and executes power transmission from the first port to the second port or vice versa.

Transformer

A transformer is provided between a power supply, and a load with a resistance value R, and includes a two-terminal pair circuit composed of n-number of reactance elements that are mutually connected, where n is a natural number equal to or greater than 4. With respect to any value of the resistance value R of the load, an input impedance Zof the two-terminal pair circuit has a real number component of k&#xb7;R, where k is a constant, and an imaginary number component of 0. Such a transformer has a small size and a light weight, and does not need a coil, an iron core, and the like as used in a conventional transformer.

A transformer includes a front stage circuit and a rear stage circuit. As a front stage circuit, a switch series unit, which is connected in parallel to a power supply, includes odd-numbered switches and even-numbered switches alternately turned ON. Mutual connection points of the respective switches and points at both ends of the switch series unit are regarded as m nodes in total. Capacitors are provided on at least one of a first electrical path combining odd nodes to lead them to a first output port, and a second electrical path combining even nodes to lead them to a second output port. The capacitors are present so as to correspond to at least (m&#x2212;1) nodes. The rear stage circuit includes an element series unit, which is composed of a pair of semiconductor elements connected in series to each other for conducting operations of mutually opposite polarities, and necessary inductors.

Transformer composed of a front stage circuit and a rear stage circuit

A front stage circuit of a transformer includes a switch series unit, capacitors, and a ground electrical path. The switch series unit, connected in parallel to a power supply, includes odd-numbered/even-numbered switches configured to be alternately turned ON. Assuming that mutual connection points of the switches and points at both ends of the switch series unit are m nodes in total, and one of the points at the both ends is a ground node, the capacitors are provided on at least one of a first electrical path that combines odd nodes and leads them to a first output port, and a second electrical path that combines even nodes and leads them to a second output port, and the capacitors are present to correspond to (m&#x2212;1) nodes excluding the ground node. The ground electrical path connects the ground node directly to the first output port without an interposed capacitor.

Transformer without magnetic coupling, electromagnetic induction or mutual inductance

A concentrator photovoltaic moduleM includes a vessel-shaped housingcomposed of a metal and a flexible printed wiring boardprovided so as to be in contact with an inner surface of the housing. The flexible printed wiring boardincludes an insulating layer, an insulating substrate, a pattern, a plurality of power generation elements, and an insulting layer. The insulating layeris in contact with a bottom surfaceof the housing. The insulating substrateis provided on the insulating layerand has flexibility. The patternis composed of a conductor and is provided on the insulating substrate. The plurality of power generation elementsare mounted on the pattern. The insulating layeris provided so as to cover an entire surface of the patternexcept for portions where the power generation elementsare mounted.

Photovoltaic module and photovoltaic panel

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4x+24.6 is satisfied.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

A transformer of distributed-constant type is provided between an AC power supply with a frequency f and a load with a resistance value R, and includes: a first converter connected to the AC power supply and having a length of &#x3bb;/4; and a second converter provided between an end of the first converter and the load, and having a length of &#x3bb;/4, where a wavelength at the frequency f is &#x3bb;. Such a transformer has a small size and a light weight, and does not need a coil, an iron core, and the like as used in a conventional transformer.

Distributed-constant type transformer for voltage conversion

A concentrator photovoltaic module including: a flexible printed circuit provided in contact with a bottom surface of a housing; and a primary concentrating portion formed by a plurality of lens elements being arranged, each lens element concentrating sunlight, wherein the flexible printed circuit includes: an insulating base material and a conductive pattern; a plurality of power generating elements provided on the pattern, so as to correspond to the lens elements, respectively; a cover lay as a covering layer having insulating property and a low water absorption not higher than a predetermined value, the cover lay covering and sealing a conductive portion including the pattern on the insulating base material; and an adhesive layer having insulating property and a low water absorption not higher than the predetermined value, the adhesive layer bonding the insulating base material and the covering layer together.

Concentrator photovoltaic module, concentrator photovoltaic panel, and flexible printed circuit for concentrator photovoltaic module

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a &#x3c;0001&#x3e; direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a &#x3c;0001&#x3e; direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

Composite of III-nitride crystal on laterally stacked substrates

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4+24.6 is satisfied.

SiCAlNcrystals in a mixed crystal state are formed. A method for manufacturing an easily processable SiCAlNsubstrate, a method for manufacturing an epitaxial wafer, a SiCAlNsubstrate, and an epitaxial wafer are provided. A method for manufacturing a SiCAlNsubstrateincludes the following steps. First, a Si substrateis prepared. A SiCAlNlayer(0&#x3c;v&#x3c;1, 0&#x2266;w&#x3c;1, 0&#x3c;x&#x3c;1, and 0&#x3c;v+w+x&#x3c;1) is then grown on the Si substrateby a pulsed laser deposition method.

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The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element arrayincludes an n-type buffer layerdisposed on an InP substrate, an absorption layerhaving a type-II MQW, a contact layerdisposed on the absorption layer, and a p-type region extending to the n-type buffer layerthrough the absorption layer, wherein the p-type region formed by selective diffusion is separated from the p-type region of an adjacent light receiving element by a region that is not subjected to selective diffusion, and, in the n-type buffer layer, a p-n junctionis formed on a crossed face of a p-type carrier concentration of the p-type region and an n-type carrier concentration of the buffer layer.

Light receiving element, light receiving element array, hybrid-type detecting device, optical sensor device, and method for producing light receiving element array

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.

A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

Method of manufacturing nitride substrate, and nitride substrate

A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 &#x3bc;m to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 &#x3bc;m and 2.0 &#x3bc;m. The ratio of the sensitivity at the wavelength of 1.3 &#x3bc;m to the sensitivity at the wavelength of 2.0 &#x3bc;m is not smaller than 0.5 but not larger than 1.6.

Photodetector and method of manufacturing the photodetector

Growing community of inventors

Itami, Japan

Hideaki Nakahata