Panasonic Intellectual Property Management Co., Ltd.

Hideaki Murase

Yoshio Kawashima

Takumi Mikawa

Tomohiro Kuroha

Yukio Hayakawa

Takao Hayashi

Michio Suzuka

Atsushi Himeno

Satoru Ito

Ryosuke Kikuchi

Kaori Takeuchi

Kosuke Nunoo

A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.

Semiconductor electrode, device comprising the same, and a method for fabricating the same

A method of manufacturing a semiconductor device according to the present invention includes: forming a lower electrode above a substrate; forming, above the lower electrode, a first variable resistance layer comprising a first metal oxide; forming a step region in the first variable resistance layer by collision of ions excited by plasma; removing residue of the first variable resistance layer created in the forming of the step region; forming a second variable resistance layer which covers the step region of the first variable resistance layer, comprises a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, and has a bend on a step formed along an edge of the step region; and forming an upper electrode above the second variable resistance layer.

Method of manufacturing semiconductor memory device

A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.

Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side.

Non-volatile memory device and manufacturing method thereof

A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend (or stepped portion) covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer.

Nonvolatile memory element, nonvolatile memory device, and methods of manufacturing the same

A method of manufacturing a non-volatile memory device comprises: forming a first electrode layer; a variable resistance material layer, a second electrode layer; and a hard mask layer, forming a first resist mask extending in a first direction on the hard mask layer; forming a first hard mask extending in the first direction by etching the hard mask layer using the first resist mask; forming a second resist mask extending in a second direction, on the first hard mask such that the width of the second resist mask is greater than the width of the first resist mask; forming a second hard mask by etching the first hard mask using the second resist mask; and forming a variable resistance element by patterning, by etching the second electrode layer, the variable resistance material layer and the first electrode layer using the second hard mask.

Manufacturing method of nonvolatile memory device and nonvolatile memory device

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer connected to the second electrode; the non-volatile memory device including a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer; wherein the side wall protective layer extends across the second electrode to a position which is above an upper end of the second electrode and below an upper end of the connection layer such that an upper end of the side wall protective layer is located above the upper end of the second electrode and below the upper end of the connection layer, when viewed from a side.

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Osaka, Japan

Hideaki Murase