Sony Semiconductor Solutions Corporation

Sony Corporation

Nishikawa Co., Ltd.

Sony Group Corporation

Archem Inc.

Hideaki Mogi

Yuta Hasegawa

Ichiro Takemura

Nobuyuki Matsuzawa

Iwao Yagi

Osamu Enoki

Yoshiaki Obana

Shintarou Hirata

Yuki Negishi

Tetsuji Yamaguchi

Masashi Bando

Sho Ikeda

Yasuharu Ujiie

Yoji Shimura

Yasuyuki Nishikawa

Jun Yasukawa

Masaki Murata

Norikazu Nakayama

Yohei Hirose

Masami Shimokawa

Mari Aoki

Masanori Iwasaki

Ken Ozawa

Yuichi Tokita

Hajime Kobayashi

Takuya Ito

Masataka Ogasawara

Yuya Kumagai

Hiroyuki Nagayama

Akihiko Kawasaka

Mitsunori Nakamoto

Kanna Matsuyama

Raku Shirasawa

Yosuke Saito

Yu Kato

Masato Kanno

Miki Kimijima

Sae Miyaji

Yuta Inaba

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

Photoelectric conversion element and solid-state imaging device

There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.

Photoelectric conversion film, photoelectric conversion element and electronic device

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

Solid-state imaging element and solid-state imaging apparatus

Cushion

Cushion material

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

Photoelectric conversion device and imaging apparatus

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrodeand a second electrodefacing each other; and a photoelectric conversion layerprovided between the first electrodeand the second electrode, and including a first quinacridone derivative represented by a formula (1). 

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). 

Photoelectric conversion element, image pickup element, laminated image pickup element, and solid-state image pickup device

A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of Rto Rrepresents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of Rto Reach represent hydrogen, any one of Rto Rrepresents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of Rto Reach represent hydrogen.

Organic photoelectric conversion element

Growing community of inventors

Kanagawa, Japan

Hideaki Mogi