Semiconductor Energy Laboratory Co., Ltd.

Hideaki Kuwabara

Shunpei Yamazaki

Junichiro Sakata

Hiroyuki Miyake

Jun Koyama

Satoshi Seo

Toshinari Sasaki

Masakazu Murakami

Toru Takayama

Junya Maruyama

Hajime Kimura

Masaaki Hiroki

Kosei Noda

Yasuyuki Arai

Yukie Suzuki

Yuugo Goto

Yumiko Ohno

Masayuki Sakakura

Hiroki Ohara

Hideto Ohnuma

Shinji Maekawa

Kengo Akimoto

Masashi Tsubuku

Hongyong Zhang

Kei Takahashi

Kouhei Toyotaka

Miyuki Hosoba

Koji Dairiki

Yoshiharu Hirakata

Tatsuya Takahashi

Saishi Fujikawa

Osamu Nakamura

Shingo Eguchi

Gen Fujii

Toshiji Hamatani

Yasuhiro Jinbo

Setsuo Nakajima

Natsuko Takase

Kazune Yokomizo

Hiroki Adachi

Takuya Tsurume

Satoshi Toriumi

Ikuko Kawamata

Takeshi Noda

Kenji Otsuka

Yusuke Yoshitani

Mari Terashima

Sachiaki Teduka

Koichiro Tanaka

Kiyoshi Kato

Hidekazu Miyairi

Shinya Sasagawa

Takeshi Nishi

Hideki Uochi

Motomu Kurata

Tamae Takano

Satoru Idojiri

Yoshitaka Dozen

Makoto Furuno

Eiji Sugiyama

Noriko Shibata

Etsuko Arakawa

Yoshiyuki Kurokawa

Hisashi Ohtani

Junichi Koezuka

Kensuke Yoshizumi

Junpei Momo

Toshiyuki Isa

Hironobu Shoji

Rumo Satake

Yoshitaka Moriya

Takahiro Kasahara

Satoshi Kobayashi

Yuko Tachimura

Masayuki Kajiwara

Yumiko Fukumoto

Hiroko Yamamoto

Makoto Foruno

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Semiconductor device and manufacturing method thereof

One embodiment of the present invention provides a display device from which a driver or a fellow passenger in a mobile body such as a vehicle can easily obtain desired information. One embodiment of the present invention is a display device including a display panel. The display panel is placed inside a mobile body including window glass. A film including a light-blocking layer is provided between the window glass and the display panel of the mobile body. By providing a driving unit controlling the display panel, the positional relationship between the window glass and the display panel is changed. Alternatively, by providing a driving unit controlling the film including the light-blocking layer, the positional relationship between the window glass and the film including the light-blocking layer is changed.

Display device, manufacturing method thereof, and vehicle

A data processing device which includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. In the case where a first region of the flexible position input portion is held by a user for a certain period, supply of image signals to the first region is selectively stopped.

Data processing device and driving method for selectively stopping images to a region when it is held by a user right or left hand

An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.

Semiconductor device

A highly convenient electronic device used while being worn on a body is provided. The electronic device is an arm-worn electronic device including a display panel, a power storage device, a circuit, and a sealing structure. The display panel displays an image with power supplied from the power storage device. The circuit includes an antenna and charges the power storage device wirelessly. Inside the sealing structure, the display panel, the power storage device, and the circuit are provided. The sealing structure includes a portion that transmits visible light. The sealing structure can be worn on an arm or is connected to a structure body that can be worn on an arm.

Electronic device

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Liquid crystal display device

A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a ring portion and a display portion. The display portion is flexible. The display portion has a top surface and a first side surface in contact with at least one side of the top surface. The first side surface has a curved surface. The top surface includes a first display region. The first side surface includes a second display region. The first display region and the second display region are continuously provided. The electronic device is mounted such that the ring portion is in contact with a user's finger.

A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a support and a display portion. The support has a first curved surface. The display portion is provided over the support. The display portion has a top surface and a side surface in contact with at least one side of the top surface. The side surface has a second curved surface. The top surface includes a first display region. The side surface includes a second display region. The first display region and the second display region are continuously provided.

A semiconductor device including a large display portion with improved portability is provided. The display device includes a first display panel, a second display panel, and an adhesive layer. The area of the second display panel is larger than the area of the first display panel. The first display panel includes a first substrate, a second substrate, and a reflective liquid crystal element and a first transistor each positioned between the first substrate and the second substrate. The second display panel includes a first resin layer having flexibility, a second resin layer having flexibility, and a light-emitting element and a second transistor each positioned between the first resin layer and the second resin layer. The liquid crystal element has a function of reflecting light toward the second substrate side. The light-emitting element has a function of emitting light toward the second resin layer side. The first substrate and part of the second resin layer are bonded to each other with the adhesive layer.

Display device

An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

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Kanagawa, Japan

Hideaki Kuwabara