Renesas Technology Corp.

Other

Hitachi Device Engineering Co., Ltd.

Hitachi Ulsi Systems Co., Ltd.

Hitachi, Ltd.

Renesas Electronics Corporation

Hideaki Kurata

Shunichi Saeki

Takashi Kobayashi

Naoki Kobayashi

Katsutaka Kimura

Yoshinori Takase

Hitoshi Kume

Keiichi Yoshida

Michitaro Kanamitsu

Takayuki Kawahara

Tomoyuki Ishii

Atsushi Nozoe

Shoji Kubono

Yoshitaka Sasago

Takeshi Sakata

Yasushi Goto

Satoshi Noda

Yoshihiro Ikeda

Taro Osabe

Kazuo Otsuga

Kunihiro Katayama

Nozomu Matsuzaki

Tokuo Kure

Ken Matsubara

Shigeru Oho

Kazunori Furusawa

Tsuyoshi Arigane

Yusuke Jono

Koji Kishi

Syunichi Saeki

Yuji Satou

Shinji Yuasa

Masahiro Shimizu

Yasuhiro Ito

Toshiyuki Mine

Tatsuo Nakagawa

Kenji Kozakai

Tsukasa Fujimori

Toru Matsushita

Yasuo Sugure

Hideaki Takano

Akihiko Hyodo

An autonomous power supply system includes a generation control circuit which controls power generation efficiency of a power generation element, a group of storage elements for charging electric power generated by the power generation element, and a charging control circuit which controls a charging operation and a discharging operation of the storage element group. The storage element group includes a primary storage element for supplying electric power to the generation control circuit and the charging control circuit, and secondary storage elements for supplying electric power to a loading device. The electric power generated by the power generation element charges the primary storage element preferentially, and the secondary storage elements subsequent to the primary storage element. A capacity value of the primary storage element is set to be smaller than a capacity value of the secondary storage elements.

Autonomous power supply system

Disclosed is a measurement device that can accurately measure size, position, the presence of an object, and the like by means of a simple and low-cost method. Specifically, disclosed is a measurement device that is provided with: a transmitter that transmits radio waves; a vibrating surface that vibrates mechanically; a receiver that receives radio waves; and a controller that transmits radio waves from the transmitter, and on the basis of the signal of the radio waves reflected by the vibrating surface and received by the receiver, outputs information about a measured object on the pathway between the transmitter and the receiver with the vibrating surface therebetween.

Measurement device

The cost necessary for introducing and maintaining a development environment that includes multiple simulators is suppressed, and a sharing of designing information is promoted, to make parameter adjustment of simulators easy. Provided is a service that unifies development environment on a computer provided with: a working computer system that can guarantee that there is no leaking of designing files; a user behavior monitoring system that collects utilization history of simulators or software, for each of the users, and selects development process of each of the users from the collected information; and a dynamic computational-resource distribution system that can conduct an automatic optimization of a complex simulation configuration, from information collected by the aforementioned user behavior monitoring system.

Computer system, program, and method for assigning computational resource to be used in simulation

The invention provides a voltage applying structure having a reduced area penalty with respect to a data line. A wiring forming a global data line and a local data line formed in a p-type well region are connected via a select transistor. Two select lines are formed on a gate electrode of the select transistor. One select line is electrically connected to the gate electrode of the select transistor, however, the other select line is not connected to the select transistor. That is, an insulator film is formed between the select line and the gate electrode. As mentioned above, two select lines shorter than a gate length are provided on one select transistor. The select line is structured such as to be connected to the other select transistor.

Semiconductor memory device and manufacturing method of the same

Disclosed is a non-volatile semiconductor memory device that uses a inversion layer provided on a semiconductor substrate as a data line. The memory device can reduce variation of characteristics among memory cells and can reduce bit cost. A plurality of assist gates are formed in the upper part of a p-type well through a gate oxide film. In the upper part of an interlayer insulator that covers those assist gates are formed word lines that are used as control electrodes. The width of those word lines is, for example, 0.1 &#x3bc;m, and each word line is separated from its adjacent word lines by a side wall spacer that is a silicon oxide film having a thickness of about 20 nm.

Semiconductor memory device and method for producing the same

Suppressing a leakage current is required in a flash memory because the channel length is made shorter with a reduction in the memory cell size. In an AND type memory array having an assist electrode, although the memory cell area has been reduced by the field isolation using a MOS transistor, leakage current in the channel direction becomes greater with a reduction in the memory cell size, resulting in problems arising like deterioration of programming characteristics, an increase in the current consumption, and reading failure. To achieve the objective, in the present invention, electrical isolation is performed by controlling at least one assist electrode of the assist electrodes wired in parallel to be a negative voltage during program and read operations and by making the semiconductor substrate surface in the vicinity of the aforementioned assist electrode non-conductive.

Semiconductor memory device

A nonvolatile memory device of the present invention performs a programming operation by accumulating a charge in certain capacitance which is provided for each programming memory cell and injecting hot electrons generated when the charge is discharged via the memory cell into a floating gate. Thus, a variation in a programming characteristic of the nonvolatile semiconductor memory device is reduced, thereby realizing high-speed programming operation.

Nonvolatile semiconductor storage device

Flash memory is rapidly decreasing in price. There is a demand for a new memory system that permits size reduction and suits multiple-value memory. A flash memory of AND type suitable for multiple-value memory with multiple-level threshold values can be made small in area if the inversion layer is utilized as the wiring; however, it suffers the disadvantage of greatly varying in writing characteristics from cell to cell. Another promising method of realizing multiple-value memory is to change the storage locations. This method, however, poses a problem with disturbance at the time of operation. The present invention provides one way to realize a semiconductor memory device with reduced cell-to-cell variation in writing characteristics. The semiconductor memory has a source region and a drain region, which are formed parallel to each other, and an assist electrode which is between and parallel to the source and drain regions without overlapping, so that it uses, at the time of writing, the assist electrode as the assist electrode for hot electrons to be injected at the source side and it uses, at the time of reading, the inversion layer formed under the assist electrode as the source region or the drain region.

A nonvolatile memory includes circuits each having first control transistors, memory transistors, second control transistors and memory transistors repeatedly connected in series in sequence. Inversion layers are formed in the direction intersecting the serial direction with turning on of the control transistors. A selection circuit selects a connection of the inversion layer placed under the first control transistor and its corresponding read/write circuit. The control transistors placed on both sides adjacent to the memory transistor are turned on to perform reading. The first control transistors placed on both sides of the second control transistor as viewed from side to side are turned on to perform writing into the other of the right and left memory transistors via one of the right and left memory transistors. The selection circuit connects the read/write circuit and the inversion layer in such a manner that the same read/write circuit is used in reading and writing for the same memory transistor.

Nonvolatile memory

A semiconductor integrated device having a plurality of memory cells, each including a floating gate, a control gate and an auxiliary gate formed over a side surface of the floating gate through an insulator film. Auxiliary gates coupled to selected memory cells function to generate hot electrons and are alternately arranged with other auxiliary gates functioning to prevent write errors in the non-selected memory cells.

Semiconductor integrated circuit device, production and operation method thereof

A non-volatile memory device is provided which includes a flash memory having a plurality of banks and a bank selection register which can take on states at least equal in number to the number of banks. The bank selection register outputs a signal to point to one of the banks based upon one of the states of the bank selection register. A controller is also provided having a plurality of data buffers corresponding, respectively, to the banks. In addition to word lines, bit lines and memory cells, each bank includes a data register to temporarily hold data to be written to the memory cells. The controller transmits data in the data buffer to the data register of the pointed to bank, while the flash memory writes data held in the data register to the memory cells of another one of the banks.

Non-volatile semiconductor memory device and semiconductor disk device

There is provided semiconductor memory capable of reconfiguring an area to be given an authentication key and access limitation, and there is implemented an information distribution system having an advanced security function using the semiconductor memory. Part of a storage area in the semiconductor memory stores information about the area to be given the authentication key and the access limitation. Alternatively, the authentication key is stored in units of data to be authenticated for limiting an access to stored information. Information is protected doubly by storing encrypted information in the area provided with the access limitation according to the above-mentioned method.

Nonvolatile semiconductor memory and method of managing information in information distribution system

A low cost semiconductor nonvolatile memory device capable of high speed programming, using an inversion layer as the wiring, and a manufacturing method for that device. The semiconductor memory device includes an auxiliary electrode at a position between and in parallel with the source and drain regions and with no position overlap versus the source region and the drain region formed mutually in parallel; wherein the auxiliary electrode for hot electron source injection is utilized as the auxiliary electrode for programming (writing); and an inversion layer formed below the auxiliary electrode is utilized as the source region or as the drain region during the read operation.

Semiconductor nonvolatile memory device

The present invention provides a semiconductor memory device capable of preventing a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitch of word lines at an end of a memory block. Plural dummy word lines are disposed at an end of a memory block and a word driver is mounted for the dummy word line to control the threshold voltage of a dummy memory cell formed below the dummy word line. Also at the time of operating a memory area for storing data from the outside, a bias is applied to the dummy word line. The invention can prevent a defect caused by falling of a word line and deterioration in patterning precision due to disturbance of the pitches of word lines at an end of a memory block, and realize high yield and reliable operation.

Semiconductor memory device comprising controllable threshould voltage dummy memory cells

Growing community of inventors

Kokubunji, Japan

Hideaki Kurata