Panasonic Corporation

Matsushita Electronics Corporation

Hideaki Kondo

Masaki Tamaru

Hidetoshi Nishimura

Hiroki Taniguchi

Ritsuko Ozoe

Akinori Shibayama

Toshiyuki Moriwaki

Takashi Andoh

This invention prevents a break in a signal wire disposed between wire ends due to attenuation and improves production yields of devices. In a standard cell, a first signal wire extends in a first direction. Second and third signal wires extend in a second direction substantially perpendicular to the first direction and are facing each other across the first signal wire. The second and third signal wires have the widths larger than the width of the first signal wire.

Standard cell and semiconductor device including the same

A semiconductor integrated circuit device capable of suppressing variations in transistor characteristics due to the well proximity effect is provided. Standard cell rows are arranged in a vertical direction, each standard cell row including standard cells arranged in a horizontal direction. In the standard cell rows, positions of the N well and the P region in the vertical direction are switched every other row. Adjacent standard cell rows share the P region or the N well. A distance from a PMOS transistor located at an end of a standard cell row to an end of an N well is greater than or equal to a width of an N well shared by standard cell rows.

Semiconductor integrated circuit device

A voltage conversion circuit that includes a reference voltage generation circuit, an output circuit, and an output control circuit. The reference voltage generation circuit outputs a first reference voltage and a second reference voltage which is higher than the first reference voltage by a predetermined voltage. Based on the first reference voltage, the output circuit outputs an internally converted voltage. The output control circuit reduces the internally converted voltage when the control circuit outputs a higher internally converted voltage than the second reference voltage. In accordance with the voltage conversion circuit, even when there occurs an increase in the internally converted voltage due to the flow of very small leakage currents between an external power supply and the internal voltage conversion circuit, the internally converted voltage is lowered by the output control circuit when it exceeds the second reference voltage output from the reference voltage generation circuit. This prevents an excess increase in the internally converted voltage, which ensures that internal elements in the semiconductor integrated circuit can be fed a stable voltage.

Internal voltage conversion circuit

Growing community of inventors

Kyoto, Japan

Hideaki Kondo