Mitsubishi Electric Corporation

Nec Corporation

Hideaki Kawamoto

Noriyuki Wada

Masahiro Iezawa

Daiki Matsuura

Kotaro Nakano

Tomoya Tachibana

Yoshihiko Kimpara

Matahiko Ikeda

Shingo Kato

Hiroyuki Kobayashi

Yasuhiko Ueda

Hidenobu Miyamoto

Taisuke Iwakiri

Takuya Miyanaga

Provided is a drive device for a rotating electric machine, including: a power conversion unit configured to convert DC power supplied from a storage battery into AC power, and to supply the AC power to a rotating electric machine; and a control unit output a switching signal to the power conversion unit. The control unit is configured to set, when the storage battery is to be charged, in a case in which a temperature of the storage battery input from an outside is lower than a set temperature suitable for charging, the switching signal for the power conversion unit so as to be different from the switching signal in a normal drive state of the rotating electric machine.

Rotating electric machine drive device

To provide a controller for rotary electric machine apparatus which can calculate the voltage command value of the converter which reduces power loss with good accuracy, in the case where the normal modulation control and the overmodulation control are switched and performed. A controller for rotary electric machine apparatus sets a system voltage that power loss becomes the minimum as the converter voltage command value, based on a power loss characteristics of the normal modulation control which is a power loss characteristics of at least the inverter with respect to the system voltage in performing the normal modulation control, and a power loss characteristics of the overmodulation control which is a power loss characteristics of at least the inverter with respect to the system voltage in performing the overmodulation control.

Controller for rotary electric machine apparatus

Provided is a control device for a permanent magnet-type rotating electrical machine (), which includes a current coordinate transformation unit () configured to output a d-axis current and a q-axis current by coordinate transformation of three-phase AC currents respectively detected by current detection units (), a current correction direction calculation unit () configured to calculate a current correction direction through use of the d-axis current and the q-axis current, and a current correction amount addition unit () configured to correct a d-axis current command and a q-axis current command based on the current correction direction. In this manner, an induced voltage is converged to lie within a maximum voltage circle in accordance with a power supply voltage.

Control device for permanent magnet-type rotating electrical machine

The control device for a rotary electrical machine which is connected between a DC power source and a rotary electrical machine and which controls driving of the rotary electrical machine by converting DC power from the DC power source into AC power, includes a power conversion circuit which is configured from a plurality of switching elements, a phase current detection unit which detects phase currents in the rotary electrical machine, a phase current ratio derivation unit which derives a ratio in which the phase currents detected by the phase current detection unit are equal to or greater than a reference value, or equal to or lower than the reference value, and an element fault determination unit which determines a fault status of each of the switching elements when the ratio derived by the phase current ratio derivation unit is equal to or greater than a previously established ratio threshold value.

Control device for rotary electrical machine and control method

There is provided a controller for a rotary electric machine drive apparatus capable of reducing data-processing load and amount of memories required for a data processing which calculates a voltage command value of the converter which reduces power loss. A controller calculates the required minimum voltage which is required in the case of performing a maximum torque/current control is calculated; calculates a converter loss coefficient which is a coefficient of a polynomial representing a power loss characteristic of the converter; calculates an inverter loss coefficient which is a coefficient of a polynomial representing a power loss characteristic of the inverter; calculates a sum total of loss coefficients for each order of polynomials; calculates the low loss voltage which the sum total power loss becomes a minimum, based on the sum total loss coefficients for each order; sets to the voltage command value of the converter.

Controller for rotary electric machine drive apparatus

An apparatus for generating plasma, includes a cylindrical vacuum chamber made of dielectric substance, the chamber being open only at a bottom thereof and having a height of 50 mm or smaller, at least one antenna coil disposed around the chamber for receiving high frequency power therein, and at least one electromagnetic coil disposed around the antenna coil. The cylindrical vacuum chamber may be replaced with a plate made of a dielectric substance. The apparatus is operative to carry out photoresist using etching without leaving any residue under a high selection ratio to the photoresist. In addition, the etching product does not tend to adhere to the vacuum chamber, and it would be easy to remove etching product from the vacuum chamber, even if the product adheres to the vacuum chamber.

Plasma generating apparatus used for fabrication of semiconductor device

A wafer (11) is conveyed in a vacuum from an Al etching chamber after the Al etching and is fed into an ashing chamber (15) without coming into contact with the atmosphere. After the wafer (11) was conveyed, CH.sub.3 OH gas of 200 sccm is first introduced by a valve (30a) and a pressure is adjusted to 1.2 Torr. Subsequently, a microwave current of 450 mA is supplied, thereby forming a plasma. The wafer (11) is processed by a down-flow system of a CH.sub.3 OH plasma. The supply of the CH.sub.3 OH gas is stopped by closing the valve (30a). Next, oxygen gas of 400 sccm is introduced by opening a valve (30b). A microwave current of 450 mA is supplied at a pressure of 1.2 Torr, thereby forming a plasma. A resist on the wafer 11 is ashed and eliminated by a down-flow process of an oxygen plasma. By those processes, the corrosion prevention and the resist ashing can be perfectly executed.

High speed ashing method

An interconnection in a semiconductor device is made of a conductive laminate including a Ti film, a TiN film and an aluminium alloy film consecutively formed on a SiO.sub.2 film grown on a Si substrate. A heat treatment of the conductive layer is performed at 450.degree.-600.degree. C. before plasma-etching to introduce nitrogen and oxygen atoms from TiN film and SiO.sub.2 film, respectively, into the Ti film. The nitrogen and oxygen atoms prevent the side-etching of the Ti film during a plasma etching of the laminate using a plasma containing chlorine atoms. An interconnection having a high reliability is obtained with a high productivity.

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Tokyo, Japan

Hideaki Kawamoto