Hitachi, Ltd.

Advanced Interconnect Materials, LLC

Tohoku University

Altiam Services Ltd. LLC

Xenogenic Development Limited Liability Company

Hideaki Kawakami

Yoshiharu Nagae

Junichi Koike

Masaaki Kitajima

Masaaki Kitazima

Akio Mukoh

Shuji Imazeki

Fumio Nakano

Hidetoshi Abe

Jun-ichi Ohwada

Pilsang Yun

Yasushi Tomioka

Katsumi Kondo

Naoki Tanaka

Hirosada Morishita

Masato Isogai

Yoshio Taniguchi

Yutaka Yoneda

Naoyuki Izaki

Nobutake Konishi

Kenji Miyata

Kiyoshige Kinugawa

Eiichi Maruyama

Yuji Mori

Seiichi Kondo

Tetsuo Ito

Junichi Ohwada

Mikio Sato

Eiji Kaneko

Kenkichi Suzuki

Takaya Suzuki

Masayoshi Suzuki

Kishiro Iwasaki

Yasuhiko Kando

Tatsuo Kanetake

Akio Mimura

Osamu Asai

Makoto Matsui

Masami Yamasaki

Masahiro Takasaka

Jun-ichi Hirakata

Michio Ooue

Yoshikazu Hosokawa

Michio Oue

Katuyuki Hunahata

Mayumi Naito

In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.

Liquid crystal display device

To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.

Electrode for oxide semiconductor, method of forming the same, and oxide semiconductor device provided with the electrode

An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layercomposed of an oxide semiconductor material containing indium, an ohmic electrodeprovided on the semiconductor layerand having an ohmic contact with the semiconductor layer, and an intermediate layerprovided between the semiconductor layerand the ohmic electrode, wherein the intermediate layerincludes a first regionwhose indium atomic concentration is greater than that of an interior of the semiconductor layerand a second regionwhose indium atomic concentration is less than that of the first region.

Semiconductor device

Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistorof the present invention includes a semiconductor layercomposed of oxide semiconductor, a source electrodeand a drain electrodethat are layers composed mainly of copper, and oxide reaction layersprovided between the semiconductor layerand each of the source electrodeand drain electrode, and high-conductance layersprovided between the oxide reaction layersand semiconductor layer

Thin-film transistor

The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

Liquid crystal display device and manufacturing method therefor

The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.

A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuMnSiO (0&#x3c;X&#x3c;Y, 0&#x3c;Z&#x3c;Y).

A testing method is provided for a semiconductor device which includes a control terminal and a pair of main terminals wherein one of the main terminals is isolated from the outside by a dielectric. First, a voltage which changes with time is applied to the isolated main terminal through the dielectric. A control signal which controls conduction and non-conduction of the semiconductor device is the applied to the control terminal. Following this, the test is made by detecting a displacement current flowing through at least one of the two main terminals and the control terminal.

Method for testing an on-off function of semiconductor devices which

An organic thin film obtained by spreading an organic substance comprising a polymer on a liquid surface, and compressing the spread substance unidirectionally or in two directions facing each other, in which organic thin film the principal chain of said polymer in the surface of the film has been oriented perpendicularly to the direction of the compression, and a method for producing the same. A liquid crystal display device comprising substrates, a polarizer, electrodes at least one of which is transparent, if necessary semiconductor substrates at least one of which is transparent, an orientation-controlling film and a liquid crystal layer, among which at least one of the polarizer, electrode, semiconductor substrate, orientation-controlling film and liquid crystal layer comprises an organic thin film. The orientation-controlling film may be an organic thin film in which the film-forming molecules have been uniformly oriented in a particular direction in the surface of the film. The present invention provides an oriented organic thin film, a liquid crystal display device with the oriented organic thin film and a thin and flexible liquid crystal display device.

Liquid crystal display devices with organic thin film formed by

A method for producing a polarizer patterned with a plural number of portions having a polarizing ability or direction of polarization comprising the first step of producing a surface oriented in a pre-determined direction on a substrate, the second step of producing a polymerizable molecular layer which comprises polymerizable molecules on the above surface, the third step of polymerizing the molecules in said polymerizable molecular layer into a desired pattern and the fourth step of removing the unpolymerized portion of said polymerizable molecular layer. For example, the following procedure is repeated on one surface of a substrate to be given a polarizing ability: (1) An organic thin film uniformly oriented in a particular direction is produced by the Langmuir-Blodgett method, (2) a polymerizable molecular layer is produced on the above thin film, (3) the molecules in the polymerizable molecular layer is polymerized into a desired pattern and (4) the portion left unpolymerized of the polymerizable molecular layer is removed. By this treatment, a polarizer having as many orientation directions as the number of repetitions is obtained. The orientational order can also be given by rubbing in place of the Langmuir-Blodgett method.

Polarizer with patterned diacetylene layer, method for producing the

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Chiba, Japan

Hideaki Kawakami