Canon Kabushiki Kaisha

Hideaki Ishino

Takehito Okabe

Kenji Togo

Masatsugu Itahashi

Ryuichi Mishima

Toshiyuki Ogawa

Takumi Ogino

Masahiro Kobayashi

Yusuke Onuki

Hiroaki Kobayashi

Hirofumi Totsuka

Tatsuya Ryoki

Yasuo Yamazaki

Katsunori Hirota

Tsutomu Tange

Toshihiro Shoyama

Hiroshi Takakusagi

Nobuhiko Sato

Akihiro Shimizu

The distance between an upper end of a light-shielding portion and a photoelectric conversion layer is longer than the distance between the lower surface of a light-shielding film and the photoelectric conversion layer. The distance between a lower end of the light-shielding portion and the photoelectric conversion layer is shorter than the distance between the lower surface of the light-shielding film and the photoelectric conversion layer. In a plane including the light-shielding film and the light-shielding portion, an opening defined by the light-shielding portion and a gap between the light-shielding portion and the light-shielding film are provided, and the width of the gap is smaller than the width of the opening.

Photoelectric conversion apparatus and equipment

A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.

A photoelectric conversion device having a light-receiving pixel region and a light-shielded pixel region, the photoelectric conversion device comprising: a semiconductor layer; a first layered structure which is arranged on a first surface of the semiconductor layer in the light-receiving pixel region and in which at least an insulating layer and a metal oxide layer arranged between the semiconductor layer and the insulating layer are stacked; and a second layered structure which is arranged on the first surface of the semiconductor layer in the light-shielded pixel region and in which at least a light-shielding layer, a metal oxide layer arranged between the semiconductor layer and the light-shielding layer, a first insulating layer arranged between the metal oxide layer and the light-shielding layer, and a second insulating layer arranged between the first insulating layer and the light-shielding layer and including hydrogen are stacked.

Photoelectric conversion device and method of manufacturing photoelectric conversion device

A semiconductor device in which a first chip and a second chip are stacked including a first wiring line and a second wiring line by which the first chip and the second chip are electrically connected. The first wiring line and the second wiring line each include a bonding portion for bonding one of a plurality of conductive patterns placed in the first chip and one of a plurality of conductive patterns placed in the second chip. The number of bonding portions included in the first wiring line is larger than the number of bonding portions included in the second wiring line.

Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2&#xd7;10atoms/cmand not greater than 4&#xd7;10atoms/cm; and forming a photoelectric conversion element in the second semiconductor region after the annealing.

Imaging apparatus, method of manufacturing the same, and camera

A semiconductor apparatus includes a semiconductor layer having first and second faces, a semiconductor element portion in which semiconductor elements are provided, and openings each penetrating the semiconductor layer from the second face side, an interconnection structure provided on the first face side, and an insulator portion provided to surround at least one of the openings within a virtual plane along the second face and extend to a depth between T/2 and T from the first face, where T is the thickness of the semiconductor layer. The semiconductor layer includes a semiconductor region of one conductivity type provided on the opposite side to the one opening to the insulator portion within the virtual plane, and a semiconductor region of another conductivity type provided in the semiconductor layer from the insulator portion face on the second face side to the second face in a direction perpendicular to the second face.

Semiconductor apparatus and equipment

A semiconductor device comprising: a substrate; a semiconductor layer; and a wiring structure section between the substrate and the semiconductor layer, the wiring structure section including a plurality of stacked wiring layers and a plurality of stacked insulating films, the wiring structure section including an electrode, wherein an opening for connecting a member to the electrode is formed in the semiconductor layer and the wiring structure section; the semiconductor layer has an isolation region in which an insulating film is embedded and which surrounds the opening; the wiring structure section has a ring which is formed of the plurality of wiring layers and surround the opening; and a distance between the opening and the ring closest to the opening is larger than a distance between the opening and the isolation region closest to the opening.

Semiconductor device, apparatus, and method for producing semiconductor device

A photoelectric conversion apparatus includes, a semiconductor substrate having a photoelectric conversion unit performing photoelectric conversion on entering light and accumulating first electric charges, a first transistor electrically connected to the photoelectric conversion unit and having a first gate on a second surface, and a second transistor having a second gate shorter than the first gate on the second surface, a first fixed charge film continuously provided directly or with an insulating film in between in an area overlapping the photoelectric conversion unit on a first surface and the second transistor, the first fixed charge film having fixed charges of the first polarity, and a second fixed charge film provided directly or with an insulating film in between in an area overlapping the second transistor and the first fixed charge film, the second fixed charge film having fixed charges of a second polarity.

Photoelectric conversion apparatus, photoelectric conversion system, moving body, and manufacturing method for photoelectric conversion apparatus

A semiconductor layer includes an opening, and in a joint surface between structures, a portion between a semiconductor layer and an opening in a direction in which the semiconductor layers are stacked together includes a plurality of conductor portions and an insulator portion located between the plurality of conductor portions in a direction orthogonal to the direction.

At least one of a passivation film extending from a pixel circuit region to a peripheral circuit region and a member disposed between a semiconductor layer and the passivation film in the peripheral circuit region contains hydrogen. The passivation film in the peripheral circuit region has a portion overlapping one conductive line of the plurality of conductive lines in a direction perpendicular to a main surface of the semiconductor layer, the one conductive line being closest to the passivation film among the plurality of conductive lines. The passivation film in the peripheral circuit region has a through-hole, the through-hole including a portion not overlapping the one conductive line in the direction perpendicular to the main surface of the semiconductor layer.

Image pickup apparatus and method for manufacturing image pickup apparatus

An image pickup apparatus includes a semiconductor layer that constitutes a pixel circuit region and a peripheral circuit region. An element isolation portion is disposed in the pixel circuit region and the peripheral circuit region, defines an element portion of the semiconductor layer, and contains an insulator. The element isolation portion in the pixel circuit region has a hydrogen concentration 10 times or more higher than the hydrogen concentration of the element isolation portion in the peripheral circuit region.

Image pickup apparatus, image pickup system, and method for manufacturing image pickup apparatus

A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Manufacturing method of semiconductor device

A method for manufacturing a semiconductor device including a MOS transistor comprising forming a gate electrode on a first insulating film formed on a substrate, performing ion implantation into the substrate and forming a diffusion region, and forming a second insulating film on the substrate, in that order. The performing ion implantation comprises forming a first resist pattern, performing the ion implantation using the first resist pattern as a mask and removing the first resist pattern, including removing, by asking, a part of the first resist pattern hardened by the ion implantation and then removing the remaining part. In forming the gate electrode, a gate electrode material layer is patterned and a protective film is formed.

Growing community of inventors

Fujisawa, Japan

Hideaki Ishino