Oki Electric Industry Co., Ltd.

Hideaki Horikawa

Masahiro Akiyama

Koji Nakamura

Osamu Gotoh

Saeko Oshiba

Kohji Yamada

Hiroki Yaegashi

In a modulator integrated laser,a wave guide channel,in a modulator area,having a core constituted of an absorption layer,and a wave guide channel,at a laser area,having a core constituted of an active layer,are optically connected with each other by a wave guide channel,having a core constituted of a light wave guide layer,The width of the light wave guide layer,increases in a continuous manner as the distance from the modulator area,increases and the width also increases in a continuous manner as the distance from the laser area,increases, with the width achieving its maximum in the vicinity of the middle area between the modulator area,and the laser area

Integrated optical element and method for manufacturing an integrated optical element

A method of manufacturing a semiconductor device for forming with high accuracy a marker used for separating a semiconductor device 10, wherein a plurality of semiconductor devices 10 are fabricated in a semiconductor substrate 16 are separated, and wherein etched grooves 31 are formed outside the semiconductor regions in the semiconductor substrate 16.

Method of manufacturing semiconductor device

An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAs has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.

InP semiconductor thin film on Si

An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAS has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.

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Tokyo, Japan

Hideaki Horikawa