Tokyo Shibaura Denki Kabushiki Kaisha

Japan Science and Technology Corporation

Kabushiki Kaisha Toshiba

Hideaki Hiraki

Shigeki Uno

Tadashi Sakai

Kazuyoshi Furukawa

Masahiro Sekino

Hirofumi Yamamoto

Masaki Katsura

Hirofumi Doi

Makoto Nagasato

Mituo Harata

Masayuki Shiratori

Kazuo Sakuma

Akio Kanai

Masaru Shimbo

Takashi Takahashi

Tatsumi Matsuo

Kiyosi Matsunaga

Tadao Kaneda

The present application provides a method for predicting the functional site of a protein using data of the entire proteins of an organism of which genome data or cDNA data is known. More specifically, the present application provides a method for predicting a protein functional site, comprising the steps of calculating the frequency of occurrence of an oligopeptide in the entire proteins, calculating the value of each amino-acid residue contributing to the frequency of occurrence as the representative value of the function, and predicting the protein functional site by using the representative value of function as an indicator. The present also provides a system for predicting a functional site for automatically performing said methods. Additionally, the present application provides a method for preparing a function-modified protein comprising subjecting the amino-acid residues composing the functional site identified by the method described above to artificial mutation, and a novel thermophilic DNA polymerase prepared by the method.

Method and a system for predicting protein functional site, a method for improving protein function, and a function-modified protein

In a semiconductor sensor, the surfaces of first and second semiconductor substractes of a first conductivity type are made into flat surfaces by polishing the surfaces and are contacted each other so that the both substrates are bonded together. Source and claim regions are formed by diffusing an impurity of second conductivity type. The source and claim regions are separated through a through hole formed in the second substrate and are extended along the surface of the second substrate. An insulative layer is formed on the opposite surface of the second substrate and an inner surface of the through hole.

Field effect transistor type semiconductor sensor and method of

A humidity-sensitive element comprises a humidity-sensitive body which includes 21-73 mol % of Cr.sub.2 O.sub.3, 25-55 mol % of at least one member selected from the group consisting of ZnO and MgO, 0.5-8.0 mol % of CuO, 0.5-8.0 mol % of Li.sub.2 O, and 0.5-8.0 mol % of V.sub.2 O.sub.5, and a pair of electrodes attached to the body. Such an element provides excellent stability over a wide range of humidity and temperature levels.

Humidity-sensitive resistive element

A humidity-sensitive element which has excellent humidity-sensitive characteristics and has a small drift after being exposed to a high humidity for a long period of time. The humidity-sensitive element of the invention includes a porous metal oxide sintered body, a simple substance or an oxide of phosphorus or sulfur carried on the porous metal oxide sintered body, and copper ions carried on the porous metal oxide sintered body.

Humidity-sensitive element and process for producing the same

A moisture sensitive element for detecting humidity variations through sensing variations in electric resistance using a porous metal oxide ceramic. At least either phorphorus or sulfur is incorporated in and supported by the porous metal oxide ceramic with the phosphorus or sulfur being applied in either a pure or oxide form.

Moisture sensitive element

A gas detecting element having a high gas selectivity which comprises an N-type metal oxide semiconductor, 0.005 to 8% by weight, based on the metal oxide, of at least one noble metal catalyst selected from the group consisting of platinum (Pt), palladium (Pd) and rhodium (Rh) and phosphorus 1.5 to 30 times as much as that of the noble metal or 0.05 to 30 times as much as that of palladium where palladium alone is used as the noble metal catalyst.

Gas detecting element

Growing community of inventors

Kawasaki, Japan

Hideaki Hiraki