Sumitomo Electric Industries, Limited

Mitsui Mining & Smelting Company, Ltd.

Hideaki Awata

Kentaro Yoshida

Takashi Uemura

Katsuhito Yoshida

Yoshiyuki Hirose

Kenichi Watatani

Miki Miyanaga

Koichi Sogabe

Mitsuyasu Ogawa

Takehisa Yamamoto

Sadamu Ishidu

Kenichi Kurisu

Kazuya Tokuda

Noboru Uenishi

Katsuji Emura

Aiko Tominaga

Rikizo Ikuta

Yasushi Itoh

Yuka Kondo

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor deviceincluding an oxide semiconductor filmformed using the oxide sintered material.

Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

Provided is a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source and a drain electrodes arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, the source electrode and/or the drain electrode including a second oxide semiconductor, the first and second oxide semiconductors containing In, W and Zn, a content rate of W/(In+W+Zn) being higher than 0.001 atomic % and not higher than 8.0 atomic %, a content rate of Zn/(In+W+Zn) being from 1.2 atomic % to 40 atomic %, an atomic ratio of Zn to W being higher than 1.0 and lower than 20000. Also provided is a method for manufacturing the device.

Semiconductor device and method for manufacturing the same

Provided are: an oxide sintered material including an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, wherein the roundness of crystal particles composed of the ZnWOcrystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device

There are provided an oxide sintered material containing an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500&#xb0; C. or more and 1000&#xb0; C. or less for 30 minutes or longer.

Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cmand equal to or lower than 7.5 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 &#x3bc;m and not more than 50 &#x3bc;m and having an average aspect ratio of not less than 4 and not more than 50.

There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10&#x3a9;cm. There is also provided a semiconductor device including the oxide semiconductor film.

Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Oxide sintered body and semiconductor device

The battery of the invention has a positive-electrode layer, a negative-electrode layer, and an electrolytic layerthrough which ionic conduction is performed between the two electrode layers. In this battery, the positive-electrode layerand the negative-electrode layerare laminated with each other and an insulating layeris placed between the positive-electrode layerand the negative-electrode layer. The insulating layerhas an area smaller than that of one of the positive-electrode layerand the negative-electrode layerand larger than that of the other. There is no place where the positive-electrode layerand the negative-electrode layerface each other through only the electrolytic layer. Even when the electrolytic layerhas a pinhole, the presence of the insulating layerbetween the positive-electrode layerand the negative-electrode layercan suppress short-circuiting between the positive- and negative-electrode layers.

Battery

In a measurement mechanism for continuously measuring a thickness of a coating layer, provided in an apparatus for forming the coating layer on a conductive elongate base material in a coating treatment base station while the base material is fed, a sensing portion for measuring a capacitance value of the coating layer is arranged before and after the base station, and tension applied to the base material at the sensing portion is set to be greater than tension applied to the base material at the base station. Thus, in forming the coating layer on the elongate base material while the base material is continuously fed, variation in a feeding speed is suppressed, influence of sway of a measurement surface in a direction of thickness at the thickness sensing portion during feeding is minimized, and a thickness of the coating layer can be measured with higher accuracy.

Coating layer thickness measurement mechanism and coating layer forming apparatus using the same

In a previous experiment of a deposition work of depositing a film with a uniform thickness on a long strip base material in the longitudinal direction thereof, an elapsed time from the start of the deposition work and an output of a power supply at the elapsed time are measured. The resulting relation between the elapsed time and the output is stored in a storage device. Subsequent deposition on a long strip base material is performed by a method in which first, the output of the power supply is controlled to be stabilized at a desired value using a crystal oscillator thickness gauge in a pre-heating step before the start of the deposition work, and then, a base material transport device is driven to start the deposition work on the long strip base material after a desired deposition rate is obtained. After the start of the deposition work, the output of the power supply is controlled to coincide with the output at the elapsed time stored in the storage device.

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Itami, Japan

Hideaki Awata