Rohm Co., Ltd.

Hideaki Anzai

Tomoichiro Toyama

Kenya Hashimoto

Ryo Yatagai

Hirotaka Obuchi

Takao Fujimori

Kazuaki Tsutsumi

A semiconductor light-emitting device includes a substrate having a base, a conductive layer and an insulating layer, a semiconductor light-emitting element and a resin member. The base has a pair of base first side surfaces and a pair of base third side surfaces. The conductive layer includes a front-surface segment and a side-surface segment. The front surface segment includes a front-surface first part. The insulating layer includes an insulating-layer first part and an insulating-layer second part. The resin member covers the insulating-layer first part and the insulating-layer second part of the insulating layer. A first thickness of the insulating-layer first part is greater than a second thickness of the insulating-layer second part.

Semiconductor light-emitting device

A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.

Semiconductor light emitting element and manufacturing method thereof

Growing community of inventors

Kyoto, Japan

Hideaki Anzai