Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Hideaki Adachi

Takakiyo Harigai

Eiji Fujii

Yoshiaki Tanaka

Akihiro Odagawa

Tsutomu Kanno

Kentaro Setsune

Hiroshi Sakakima

Masayoshi Hiramoto

Yasunari Sugita

Satoshi Yotsuhashi

Akihiro Sakai

Nozomu Matsukawa

Hidetaka Higashino

Yo Ichikawa

Kenji Iijima

Kohei Takahashi

Koichi Mizuno

Michihito Ueda

Kiyotaka Wasa

Syunichiro Kawashima

Mitsuo Satomi

Osamu Yamazaki

Masahiro Sakai

Ryouichi Takayama

Kazuya Hashimoto

Nozomu Matukawa

Shinichiro Hatta

Yuka Yamada

Kiyoshi Ohnaka

Satoshi Okada

Takashi Hirao

Akira Enokihara

Takeshi Kamada

Yasuhiro Kawawake

Tsuneo Mitsuyu

Takuji Tsujita

Yu Nishitani

Kenzo Ohji

Yuji Zenitani

Shigemi Kohiki

Takao Kawaguchi

Toshifumi Sato

Kazuhide Ichikawa

Toshifumi Satoh

Kumiko Hirochi

Daisuke Matsunaka

Tomoaki Matsushima

Yo Ichikakwa

Akihrio Sakai

A solid electrolyte comprises a compound represented by a formula MgAlMO, where M is at least one selected from the group consisting of Si, Ge, Sn, Pb, Ti, and Zr; 0&#x3c;x&#x3c;1; 0.125&#x2264;y&#x2264;0.5; and 3.8&#x2264;z&#x2264;4.1.

Solid electrolyte having magnesium ion conductivity, and magnesium secondary battery containing the same

Provided are a structure including: a substrate; a first layer provided on the substrate; a second layer provided on the first layer; and a third layer provided on the second layer, in which the first layer is a layer containing a compound represented by a chemical formula MInOusing M as a metal element, the second layer is a metal layer having a face-centered cubic structure, and the third layer is a ferroelectric film, and a sensor using the structure.

Structure using ferroelectric film and sensor using said structure

The present invention provides a thin film structural body comprising a sapphire substrate having a principal plane of a {11-26} plane and a first epitaxial thin film which is grown directly on the principal plane of the sapphire substrate and has a principal plane of a {100} plane. As one example, in a fabrication method of the thin film structural body, a first epitaxial thin film is grown on a principal plane of a {11-26} plane of the sapphire substrate. The grown first epitaxial thin film has a principal plane of a {100} plane.

Thin-film structural body and method for fabricating thereof

The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)Ba]TiOcrystal piezoelectric film. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a (001) orientation only. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)Ba]TiOcrystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)Ba]TiOcrystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.

NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same

Provided is a novel actuator and a method for driving the same. The present invention is an actuator comprising a first laminate comprising a first (Bi, Na, Ba) TiOlayer between first and second electrode layers, a second laminate comprising a second (Bi, Na, Ba) TiOlayer between third and fourth electrode layers, and a tilt part provided between the first and second laminates. Both of the first and second (Bi, Na, Ba) TiOlayers are preferentially oriented in a [011] crystalline axis direction. Voltages V, V, V, and Vwhich satisfy Requirement A: V&#x3e;Vand V&#x3c;Vor Requirement B: V&#x3c;Vand V&#x3e;Vare applied to the first-fourth electrode layers so as to tilt the tilt part. One of the first edge and the second edge is moved in the [011] crystalline axis direction and the other is moved in the reverse direction thereof.

Actuator and method for driving the same

Provided is a piezoelectric thin film including a non-lead-containing (that is, lead-free) ferroelectric material and having high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric film according to the present invention comprises a laminate structure. The laminate structure comprises an electric film and a (1-x)(Na,Bi)TiO-xBaTiOfilm. x represents a value of not less than 0.03 and not more than 0.15. The (1-x)(Na,Bi)TiO-xBaTiOfilm has a (110) surface orientation only. The (1-x)(Na,Bi)TiO-xBaTiOfilm has an orthorhombic crystal structure only.

Piezoelectric thin film, method for manufacturing same, inkjet head, method for forming image using inkjet head, angular velocity sensor, method for measuring angular velocity using angular velocity sensor, piezoelectric power generation element, and method for generating power using piezoelectric power generation element

In order to provide a non-lead piezoelectric film having high crystalline orientation, low dielectric loss, high polarization-disappear temperature, and high piezoelectric constant, the present invention is a piezoelectric film comprising: a NaMlayerhaving a (001) orientation only; and a (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayerhaving a (001) orientation only. The (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayeris formed on the NaMlayer. M represents Pt, Ir, or PtIr. Q represents Fe, Co, ZnTi, or MgTi. x represents a value of not less than 0.002 and not more than 0.02. &#x3b1; represents a value of not less than 0.20 and not more than 0.50.

Piezoelectric film and method of manufacturing the piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a piezoelectric film having a higher polarization-disappearance temperature Td and the usage thereof. The piezoelectric film of the present invention comprising an interface layer of (Na, Bi)TiO-BaTiOlayer having a (001) orientation only and a piezoelectric layer of a (Na, Bi)TiO-BaTiOlayer having a (001) orientation only, where x1 is 0.28-0.43, y1 is 0.49-0.60, x2 is 0.30-0.46, and y2 is 0.51-0.63. The piezoelectric layer is formed on the interface layer. The interface layer contains nickel. The interface layer has a Ni/Ti molar ratio of not less than 0.02.

Piezoelectric film and usage thereof

Provided is an NBT-BT lead-free piezoelectric film having a high crystalline orientation and a high piezoelectric constant. The present invention is a piezoelectric film comprising a NaMlayer and a (Bi, Na)TiO&#x2014;BaTiOlayer. The (Bi, Na) TiO&#x2014;BaTiOlayer is formed on the NaMlayer, where M represents Pt, Ir, or PtIr and x represents a value of not less than 0.002 and not more than 0.02. Both of the NaMlayer and the (Bi, Na) TiO&#x2014;BaTiOlayer have a (001) orientation only, a (110) orientation only, or a (111) orientation only.

Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaLaNiOlayer having only an (001) orientation and a (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayer having only an (001) orientation. The (1-&#x3b1;) (Bi, Na, Ba) TiO-&#x3b1;BiQOlayer is formed on the NaLaNiOlayer. The character of Q represents Fe, Co, ZnTi, or MgTiThe character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of &#x3b1; represents a value of not less than 0.20 and not more than 0.50.

A piezoelectric film comprising comprises a (NaBi)TiO&#x2014;BaTiOlayer with a (110) orientation, where 0.30&#x2266;x&#x2266;0.46 and 0.51&#x2266;y&#x2266;0.62, and the (NaBi)TiO&#x2014;BaTiOlayer has composition around a Morphotropic Phase Boundary.

Piezoelectric film and ink jet head and angular velocity sensor using the same

The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect. In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaBi)TiO&#x2014;BaTi0layer (0.30&#x2266;x&#x2266;0.46 and 0.51&#x2266;y&#x2266;0.62) having a (001) orientation.

Piezoelectric film and method of manufacturing the same, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

The purpose of the present invention is to provide an ink jet head capable of ejecting an exact amount of ink, an angular velocity sensor capable of measuring an exact angular velocity, and a piezoelectric generating element capable of generating an electric power due to positive piezoelectric effect, even when the applied electric field of 40 kV/cm or more is applied. The piezoelectric film used for the present invention comprises a piezoelectric layer and first and second electrodes which sandwich the piezoelectric layer therebetween, the first electrode comprises a (001) orientation, the piezoelectric layer is composed of (1-z)(NaBi)TiO-zBaTiOhaving a (001) orientation, x is not less than 0.30 and not more than 0.46, y is not less than 0.51 and not more than 0.62, and z is not less than 0.07 and not more than 0.09.

Ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the peizoelectric generating element

The purpose of the present invention is to provide a BNT-BT piezoelectric film having a higher crystalline orientation, a higher piezoelectric constant, and a higher ferroelectric property. The present invention is directed to a piezoelectric film comprising a first electrode having only a (110) orientation; a (NaxBi0.5)TiO0.5x+2.75&#x2014;BaTiO layer having only a (110) orientation, a (Bi,Na)TiO3&#x2014;BaTiO3 layer having only a (110) orientation, and a second electrode, wherein a value of x is not less than 0.29 and not more than 0.40, and the first electrode, the (NaxBi0.5)TiO0.5x+2.75&#x2014;BaTiO3 layer, the (Bi,Na)TiO3&#x2014;BaTiO3 layer, and the second electrode are laminated in this order.

Piezoelectric film, ink jet head, angular velocity sensor and piezoelectric generating element

The present invention provides a piezoelectric thin film comprising an electrode film with a (001) orientation, a (NaBi)TiO&#x2014;BaTiOfilm with a (001) orientation (x represents not less than 0.29 and not more than 0.4) and a (Na,Bi)TiO&#x2014;BaTiOpiezoelectric layer, the electrode film, the (NaBi)TiO&#x2014;BaTiOfilm, and the (Na,Bi)TiO&#x2014;BaTiOpiezoelectric layer being laminated in this order. The lead-free piezoelectric thin film of the present invention has low dielectric loss and high piezoelectric performance.

Piezoelectric thin film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element

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Osaka, Japan

Hideaki Adachi