Korea Institute of Science and Technology

Hi Jung Kim

Suk Hee Han

Joon Yeon Chang

Woo Young Lee

Hyun Woo Koo

Hyung Jun Kim

Young Keun Kim

Kyung Ho Shin

Woong Hwang

Moo Whan Shin

Kwan Hyi Lee

Kyoung Il Lee

Ki Hyeon Kim

Dal Young Kim

Jung Mi Lee

Min Hong Jeun

Han Joo Lee

Yun Myung Kim

Jae Min Myoung

A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.

Complementary logic device using spin injection

In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.

Method for fabricating Bi thin film and device using the same

Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.

Hybrid ferromagnet/semiconductor spin device and fabrication method therof

A 3 group&#x2013;5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material &#x2018;C&#x2019; selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material &#x2018;A&#x2019;, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device

Disclosed is a FeCoNiN-based soft magnetic thin film composition having the formula Fe Co Ni N , wherein x, y, z and v are expressed in at % and satisfy 41&lE;x&lE;55, 18&lE;y&lE;27, 19&lE;z&lE;32, 0<v&lE;5, and x&plus;y&plus;z&plus;v&equals;100. The Fe-based ultrafine crystalline soft magnetic thin film composition is prepared by the more simplified method and much more excellent soft magnetic properties in the high-frequency than the conventional soft magnetic thin film compositions.

FeCoNiN-based soft magnetic thin film composition

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Seoul, South Korea

Hi Jung Kim