Other

Electronics and Telecommunications Research Institute

The Industry & Academic Cooperation in Chungnam National University (Iac)

Qnix Computer Co., Ltd.

Hi Deok Lee

Ho Jun Lee

Jae Duk Lee

Doo Won Seo

Jun Bo Yoon

Jae Kwan Kim

Ki Ho Han

Chul Hi Han

Choong Ki Kim

Yong Jin Kim

Chel Jong Choi

Meng Li

Jeongchan Lee

Choong K Kim

Chul H Han

Geon Ho Shin

Jun B Yoon

Disclosed is a method for reducing contact resistance, including depositing a GST layer on an InGaAs substrate, generating an InGaAs/GST/Ni stacked structure by depositing a Ni layer on the GST layer, and thermally treating the stacked structure to rearrange components of the GST layer and to generate a Ni&#x2014;InGaAs alloy.

Method for reducing contact resistance

Provided is a semiconductor device and a manufacturing method thereof. The method includes the steps of: forming a thin film transistor including a substrate having a semiconductor layer and silicon, a gate insulation layer formed on the semiconductor layer, a gate electrode formed on the gate insulation layer, and source and drain regions formed in the semiconductor layer; forming a first metal layer on the substrate having the semiconductor layer and the gate electrode; forming a second metal layer on the first metal layer; forming a third metal layer on the second metal layer; forming a nitride layer on the third metal layer; and annealing the substrate having the nitride layer, and forming a silicide layer on the gate electrode and the source and drain regions.

Semiconductor device having a silicide layer and manufacturing method thereof

A heat generating type ink-jet print head including an ink supply passage for receiving an ink from an ink container, a micro chamber for storing the ink and nozzles, all being directly formed on a substrate, and a method for fabricating the ink-jet print head using an electrolytic polishing process, and a method for fabricating the ink-jet print head. The ink-jet print head is fabricated using an electrolytic polishing process, thereby achieving an accurate and inexpensive fabrication.

Heat generating type ink-jet print head

Disclosed are electropolishing methods for etching a substrate in self alignment. A hole is formed in a substrate in self alignment by using an electropolishing system, wherein a reaction tube, an etchant solution, an electrode, a constant current source and the silicon substrate, said etchant solution being contained in a space confined by the reaction tube and the substrate, which is attached to one end of the reaction tube in such a way that the bottom of the substrate may be toward the interior of the space, said constant current source being connected with a metal layer formed on the substrate and the electrode. The substrate is made to be porous by flowing a constant current and etched by the action of the etchant solution while breaking the current. In addition to being economical, the methods can determine the position and size of the hole accurately and precisely. Further, neither chemical damage nor mechanical impact is generated on the substrate.

Electropolishing methods for etching substrate in self alignment

Growing community of inventors

Daejeon, South Korea

Hi Deok Lee