International Business Machines Corporation

Hezi Shalom

Noam Jungmann

Israel A Wagner

Elazar Kachir

Lidar Herooti

Lior Arie

Donald W Plass

Lior Binyamini

Tomer Abraham Cohen

Yaron Freiman

Amit Amos Atias

Uri Moshe

A clock gating method and circuit for avoiding out-of-spec clock operations. The circuit comprises a clock gating section that gates a clock signal according to an enabling signal generated by an enabling signal controller, the enabling signal controller generating the enabling signal according to a set signal and a reset signal. The circuit further comprises a set signal generator that generates the set signal, a reset signal generator that generates the reset signal, and a feedback section that uses the enabling signal to generate the feedback signal for the reset signal generator. The reset signal generator generates the reset signal by using the feedback signal. The enabling signal controller further generates an acknowledgement signal having a high signal during a blocking period when the clock signal is blocked and utilizes the acknowledgement signal as an announcement to a higher circuit that the clock signal is blocked.

Clock gating circuit for avoiding out-of-spec clock operations in self-timed circuits

A system, program product, and method for processing synchronized memory repairs. The method includes identifying a faulty memory row from a plurality of functioning memory rows in a memory array. The method also includes executing memory row repair operations directed toward the faulty memory row and identifying a repair row to operationally replace the faulty memory row. The method also includes creating a multiple hot state within a memory decoder. The memory decoder includes logic circuitry for executing operation of the plurality of functioning memory rows. The method further includes activating a wordline of the identified repair row through the multiple hot state, and executing one or more memory operations on the identified repair row though the memory decoder. Accordingly, the embodiments disclosed herein facilitate synchronization of the repair row and functioning memory rows within the memory array, as well as any associated peripheral signals.

Synchronized memory repair system (SRS)

An example computer-implemented method includes receiving hardware testing results, an address, input/output (I/O) data, a redundancy status, and an input-memory-output mapping corresponding to a memory being tested. The method includes locating a failed cell of the memory based on the hardware testing results, the address, the input/output data, the redundancy status, and the input-memory-output mapping. The method also includes automatically repairing the failed cell.

Locating failures in memory with redundancy

A voltage-controlled delay line including a clipper configured to produce a clipped input voltage from an input voltage, an oscillator configured to produce a strobe pulse train that is initiated by the clipped input voltage, and a divider module configured to divide the strobe pulse train and produce an output voltage from the divided strobe pulse train.

Self-timed, log-space, voltage-controlled delay line

A method in a computer-aided design system for generating a functional design model of a static random access memory is described herein. The method comprises generating a functional representation of a first local evaluation logic coupled to a first set of consecutive global bit lines (GBLs) and a first set of local bit lines (LBLs), the first local evaluation logic comprising a plurality of devices. The method further comprises generating a functional representation of a second local evaluation logic communicatively coupled to the first local evaluation logic via the devices; the second local evaluation logic is coupled to a second set of consecutive GBLs and a second set of LBLs. In addition, the second set of consecutive GBLs consecutive to the first set of consecutive GBLs, the first and second evaluation logics to generate signals from the LBLs such that one GBL is to be active at any point in a read or write cycle and the other GBLs are not concurrently active.

Structure for static random access memory

A design structure can include elements that, when processed in a semiconductor manufacturing facility, produce an SRAM that includes a first local evaluator coupled to a first global bit line (GBL) and a first set of local bit lines (LBLs). The SRAM can also include a second local evaluator communicatively coupled to the first local evaluator. The second local evaluator is coupled to a second GBL and second set of LBLs. The second GBL is consecutive to the first GBL. The first and second evaluators are to generate signals from the LBLs such that one GBL of a combined first and second GBLs is active at any point in a read or write cycle.

A method for testing a circuit comprising a memory element, a voltage comparator and a supply selector, the circuit is configured to be connected to two power supplies, the voltage comparator is configured to provide an output indicative of a voltage difference between the two power supplies above a predetermined threshold, the supply selector is configured to select a power supply to feed power to the memory element in response to the output from the voltage comparator. The method comprises connecting the two power supplies to the circuit, wherein said connecting comprises causing the two power supplies to drive power to the memory element and to another element of the circuit, wherein the voltage different between the two power supplies is above the predetermined threshold. The method further comprises that in response to said connecting, the supply selector of the circuit is invoked and disconnects one power supply from the memory element; whereby stress testing the circuit, the stress testing tests the memory element without a voltage difference condition, the stress testing tests the another element with the voltage difference condition.

Voltage comparator circuit and usage thereof

A circuit comprising a first power supply having a first voltage and a second power supplying having a second voltage, wherein said first and second voltages are different at least in some cycles of said circuit, a memory element, wherein said first and second power supplies are driven into said memory element, a voltage comparator having connected thereto said first and second power supplies, wherein said voltage comparator is an analog to digital converter configured to provide digital output indicting of a voltage difference over a predetermined threshold between said first and second power supplies, and a supply selector element, wherein said supply selector element is configured to disconnect said second power supply from said memory element in response to the digital output of said voltage comparator.

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Haifa, Israel

Hezi Shalom