Samsung Electronics Co., Ltd.

Heung-Sik Park

Kyeong-Koo Chi

Seung-Pil Chung

Chang-Jin Kang

Sang-Gyun Woo

Dong-Chan Kim

Gi-Sung Yeo

Tae-hyuk Ahn

Cha-Won Koh

Joon-Soo Park

Jeong-lim Nam

Cheol-Kyu Lee

Seok-hwan Oh

Sang-Hun Seo

Jun-Ho Yoon

A method of fabricating a semiconductor device is provided. The method can include forming a hard mask film including lower and upper hard mask films on a substrate in which an active region and an isolation region are defined and patterning the hard mask film to provide a hard mask pattern partially exposing the active region and the isolation region. An etchant can be applied to the active and isolation regions using the hard mask pattern as an etching mask to form a trench in the active region of the substrate while avoiding substantially etching the isolation region exposed to the etchant and a gate can be formed on the trench.

Methods of forming semiconductor devices using selective etching of an active region through a hardmask

Methods of fabricating a semiconductor integrated circuit device are disclosed. The methods of fabricating a semiconductor integrated circuit device include forming a hard mask layer on a base layer, forming a line sacrificial hard mask layer on the hard mask layer in a first direction, coating a high molecular organic material layer on the line sacrificial hard mask layer pattern, patterning the high molecular organic material layer and the line sacrificial hard mask layer pattern in a second direction, forming a matrix sacrificial hard mask layer pattern, forming a hard mask layer pattern by patterning the hard mask layer with the matrix sacrificial hard mask layer pattern as an etching mask and forming a lower pattern by patterning the base layer using the hard mask layer pattern as an etch mask. The method according to the invention is simpler and less expensive than conventional methods.

Method of patterning a matrix into a substrate via multiple, line-and-space, sacrificial, hard mask layers

Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between patterns in the formation of a finer pattern below resolution limits of a photolithography process by double patterning are also provided. A first hard mask layer and/or a second hard mask layer may be formed on a layer of a substrate to be etched. A first etch mask pattern of a first pitch may be formed on the second hard mask layer. After a buffer layer is formed on the overall surface of the substrate, a second etch mask pattern of a second pitch may be formed thereon in a region between the first etch mask pattern. The buffer layer may be anisotropically etched using the second etch mask pattern as an etch mask, forming a buffer layer pattern. The second hard mask layer may be anisotropically etched using the first etch mask pattern and/or the buffer layer pattern as etch masks, forming a second hard mask pattern. The first hard mask layer may be anisotropically etched using the second hard mask pattern as an etch mask, forming a first hard mask pattern. The etched layer may be anisotropically etched using the first hard mask pattern as an etch mask.

Methods of fabricating a semiconductor device

Disclosed herein is a method for etching a face of an object and more particularly a method for etching a rear face of a silicon substrate. The object having a silicon face is positioned so as to be spaced apart from a plasma-generating member by a predetermined interval distance. The plasma-generating member generates arc plasmas to form a plasma region. A reaction gas is allowed to pass through the plasma region to generate radicals having high energies and high densities. The radicals react with the object to etch the face of the object. The face of the object can be rapidly and uniformly etched.

Method for etching an object using a plasma and an object etched by a plasma

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Gyeonggi-do, South Korea

Heung-Sik Park