Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Herve Achard

Bernard Viala

Jean-Pierre Joly

Method for producing an integrated magnetic device with variable inductance, comprising:

Integrated magnetic device with variable inductance and method for making such a device

A process for producing an improved non-volatile storage cell of the metal-ferroelectric-semiconductor type is provided. The non-volatile storage cell has at least one metal-ferroelectric-semiconductor transistor formed in a semiconductor substrate and having a source (5), a drain (6), and a gate (4). The gate is insulated from the source and the drain by a ferroelectric layer (2). The transistor has at least one lateral programming electrode (BL) in contact with the ferroelectric layer and insulated from the gate. In a preferred embodiment the cell also has a dielectric layer (7) interposed between the ferroelectric layer and the substrate. Particular utility for the present invention is found in the area of static memory devices, although other utilities are contemplated.

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Grenoble, France

Herve Achard