Infineon Technologies Ag

Hermann Jacobs

Lothar Risch

Siegfried Schwarzl

Emmerich Bertagnolli

Bernd Goebel

Wolfgang R&ouml;sner

Ties Ramcke

Resistors are connected between word lines and bit lines running transversely with respect thereto. The resistors have a higher resistance than the word lines and the bit lines. The bit lines are each connected to a sense amplifier which regulates the potential on the respective bit line to a reference potential and at which an output signal can be picked off. If one of the word lines is selected and all the other word lines are put at reference potential, then the resistance of the resistor, which is assigned to an information item, can be read from the output signal.

Memory cell configuration and fabrication method

A storage cell is described which includes a storage element whose electric resistance represents an information unit and can be influenced by a magnetic field as well as a transistor which when the information is read out allows for the corresponding storage cell to be selected from among the storage cells. To write the information unit, a write line and a bit line are provided which intersect in the area of the storage element and are able to generate the magnetic field. The storage cell is disposed between the bit line and a shared voltage supply connection. The storage cell is disposed between the bit line and the write line and the write line can coincide with a gate line that controls the transistor. The transistor is a planar or vertical transistor. The storage element and the transistor can be positioned next to or on top of each other.

Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating it

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Bruckmühl, Germany

Hermann Jacobs