Infineon Technologies Ag

Infineon Technologies Austria Ag

Infineon Technologies Dresden Gmbh & Co . Kg

Hermann Gruber

Andreas Peter Meiser

Thomas Gross

Anton Mauder

Hans-Joachim Schulze

Walter Hartner

Guenther Ruhl

Dietrich Bonart

Wolfgang Lehnert

Rudolf Berger

Uwe Hoeckele

Raimund Foerg

Dirk Meinhold

Klemens Pruegl

Dirk Offenberg

Ines Uhlig

Emanuele Bruno Bodini

Felix Braun

Markus Zundel

Roland Rupp

Michael Bernhard Sommer

Thomas Christian Neidhart

Berthold Astegher

Lars Mueller-Meskamp

Karsten Kellermann

Christian Rottmair

Franz Hirler

Wolfgang Raberg

Matthias Stecher

Sergio Morini

Holger Wille

Markus Muellauer

Joachim Mahler

Rolf Weis

Till Schloesser

Thomas Fischer

Thomas Ferianz

Anton Prueckl

Hubert Rothleitner

Thorsten Hinderer

Detlef Weber

Markus Rochel

Mathias Von Borcke

Matthias Schmidt

Joerg Busch

Hans Joachim Schulze

Werner Irlbacher

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuitry that operates in a first voltage domain, a second region including second circuitry that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Transferring information across a high voltage gap using capacitive coupling with DTI integrated in silicon technology

A device including a first voltage domain and a second voltage domain is provided, the voltage domains being separated by an isolation barrier. In addition, the device includes a scratch detection circuit including a first and a second electrode at a distance of less than 2 &#x3bc;m.

Device comprising two voltage domains and method

A multi-voltage domain device includes a semiconductor layer including a first main surface, a second main surface arranged opposite to the first main surface, a first region including first circuity that operates in a first voltage domain, a second region including second circuity that operates in a second voltage domain different than the first voltage domain, and an isolation region that electrically isolates the first region from the second region in a lateral direction that extends parallel to the first and the second main surfaces. The isolation region includes at least one deep trench isolation barrier, each of which extends vertically from the first main surface to the second main surface. The multi-voltage domain device further includes at least one first capacitor configured to generate an electric field laterally across the isolation region between the first region and the second region.

Transferring information across a high voltage gap using capacitive coupling with dti integrated in silicon technology

Transfering informations across a high voltage gap using capacitive coupling with DTI integrated in silicon technology

A method includes producing a semiconductor arrangement having a semiconductor layer, a first insulation layer arranged on the semiconductor layer and facing a first surface of the semiconductor arrangement, and an insulating via extending in a vertical direction through the semiconductor layer as far as the first insulation layer, the insulating via surrounding a region of the semiconductor layer in a ring-shaped fashion. The method further includes permanently securing a first carrier to the first surface of the semiconductor arrangement.

Method for stabilizing a semiconductor arrangement

A circuit arrangement is enclosed. The circuit arrangement includes a first electronic circuit; a second electronic circuit; and a coupling circuit connected between the first electronic circuit and the second electronic circuit. The first electronic circuit is at least partially integrated in a first region of a semiconductor layer, the second electronic circuit is at least partially integrated in a second region of the semiconductor layer, and the second region adjoins a first insulating layer formed on a first surface of the semiconductor layer and is electrically insulated from the first region by a second insulating layer. Further, the coupling circuit is arranged in a third insulating layer formed on a second surface of the semiconductor layer and comprises at least two capacitors connected in series.

Circuit arrangement with galvanic isolation between electronic circuits

A method includes: forming first and second trenches in a semiconductor body; forming a first material layer on the semiconductor body in the first and second trenches such that a first residual trench remains in the first trench and a second residual trench remains in the second trench; removing the first material from the second trench; and forming a second material layer on the first material layer in the first residual trench and on the semiconductor body in the second trench. The first material layer includes dopants of a first doping type and the second material layer includes dopants of a second doping type. The method further includes diffusing dopants from the first material layer in the first trench into the semiconductor body to form a first doped region, and from the second material layer in the second trench into the semiconductor body to form a second doped region.

Method for forming complementary doped semiconductor regions in a semiconductor body

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

A semiconductor device includes a semiconductor substrate having a first region and a second region. The semiconductor device also includes an insulating structure laterally between the first region and the second region in the semiconductor substrate. The insulating structure electrically insulates the first region laterally from the second region in the semiconductor substrate. The semiconductor device further includes a connecting structure at a surface of the semiconductor substrate. The connecting structure contacts at least a sub-structure of the insulating structure and at least one of the first region and the second region. At least a sub-structure of the connecting structure has an electrical resistivity greater than 1*10&#x3a9;m and less than 1*10&#x3a9;m.

Semiconductor devices and methods for forming semiconductor devices

In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. The device also includes a giant magnetoresistive (GMR) sensor electrically connected to circuitry in the second conductive region and magnetically coupled to the one or more conductors, wherein the GMR sensor is positioned at least partially lateral relative to the one or more conductors.

Lateral transmission of signals across a galvanic isolation barrier

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

Methods for producing polysilicon resistors

Growing community of inventors

Woerth a. D., Germany

Hermann Gruber