Basf Aktiengesellschaft

Hermann Deichelmann

Roland Koenig

Herbert Henkler

Volker Koch

Bernd Roeger

A magnetic domain storage device comprising a ferromagnetic, polycrystalline metal layer which is applied to a support and comprises areas of different coercivity, the areas of lower coercivity in the form of strip-shaped channels being surrounded by areas of higher coercivity; a system of electrical conductors, extending in planes arranged parallel and in close vicinity to the ferromagnetic layer for creating, propagating and detecting magnetic domains in the channels of lower coercivity; and a baseplate with electrical connections. The areas of lower coercivity follow a path similar to a spiral with its one end adjacent to the center of the support and the other end adjacent to a corner of the support and executing at least one full 360.degree. turn between both ends. The domain storage devices of this type are distinguished by a higher storage capacity.

Magnetic domain storage device

A magnetic thin film storage device of simplified design working on the shift register principle and comprising a flat support to which a ferromagnetic layer has been applied, which layer contains regions of different coercivity, lower-coercivity regions being surrounded by regions of higher coercivity, and also comprising electric conductors extending in planes which are parallel to the support, the conductors serving to produce the magnetic fields required to propagate magnetic domains into the lower-coercivity regions, at least one group of channels being provided which terminate in the same enlarged lower-coercivity area, and the magnetic domains contained in the channels terminating in the said enlarged area being propagated individually and consecutively into that enlarged area. The components of thin-film storage devices of this type can be easily brought into register with the aid of mechanical stops or similar devices and their production can thus be largely automated; besides, the risk of random errors occurring in the flow of data can be substantially reduced, owing to the particularly simple geometric shape of the channels.

Magnetic thin film storage device

A thin film magnetic storage device consisting of a flat support to which a ferromagnetic layer which areas of different coercive force is applied, the low coercive force areas being surrounded by high coercive force areas, and further consisting of electric conductors extending in planes parallel with the support and used to produce the magnetic fields required for the propagation of magnetic domains in the low coercive force areas. The low coercive force areas are provided in the shape of strip-like channels, and the electric conductors are arranged in two separate planes such that they intersect the channels at right angles and that the conductors of one plane, at points of intersecton with the channels are situated above the gaps between the conductors of the second plane, and that the width of the conductors at points of intersecton with the channels is at least as great as the channel width. Thin film magnetic storage devices having this structure are simpler and cheaper to manufacture and are characterized by higher noise immunity and a low power requirement.

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Ludwigshafen, Germany

Hermann Deichelmann