Other

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien Ag

Herbert Weidner

Wilfried Von Ammon

Christoph Frey

Dirk Zemke

Ludwig Thanner

A process for producing nitrogen-doped semiconductor wafers has the nitrogen being derived from a dopant gas which contains NH . The process includes pulling a single crystal from a melt of molten semiconductor material, feeding the dopant gas to the semiconductor material, and cutting the nitrogen-doped semiconductor wafers off the pulled single crystal. The dopant gas is fed to the semiconductor material at most until pulling begins for that part of the single crystal from which the semiconductor wafers are cut.

Process for producing nitrogen-doped semiconductor wafers

A method and a device is provided for determining the diameter of a monocrystal growing at a crystallization boundary during the pulling of the monocrystal from a melt. The method includes imaging a part of the crystallization boundary on at least one mirror, observing the mirror image and determining the diameter of the monocrystal from the observed relative position of the crystallization boundary on the mirror image.

Growing community of inventors

Haiming, Germany

Herbert Weidner