Asm IP Holding B.v.

Asm International N.v.

Asm America, Inc.

Asm Genitech Korea Ltd.

Asm Microchemistry Oy

Herbert Terhorst

Eric James Shero

Carl Louis White

Lucian C Jdira

Mohith E Verghese

Kyle Fondurulia

Todd Robert Dunn

Theodorus G M Oosterlaken

Vladimir Ivanovich Kuznetsov

Marko Peussa

Darko Babic

Min Yan

Dan Maurice

Dieter Pierreux

Bert Jongbloed

Dae Youn Kim

Ernst H A Granneman

Chris G M De Ridder

Frank Huussen

Bhushan Zope

Wonyong Koh

Mike Halpin

Theodorus Gerardus Maria Oosterlaken

Jerry Winkler

Gert-Jan Snijders

Sang Jin Jeong

Hyung-Sang Park

Raj Singu

Kyung Il Hong

Suvi P Haukka

Ivo Johannes Raaijmakers

Pekka T Soininen

Marko J Tuominen

Kai-Erik Elers

Michael W Halpin

Werner Knaepen

Naoto Tsuji

Jereld Lee Winkler

Ernst Hendrik August Granneman

David Marquardt

Hessel Sprey

Andrew M Yednak, Iii

Adriaan Garssen

Yoshio Susa

Ankit Kimtee

Cornelius A Van Der Jeugd

Klaas P Boonstra

Menso Hendriks

Kornelius Haanstra

Dinkar Nandwana

Michael Schmotzer

Ernst H Granneman

Pascal Gustaaf Vermont

William George Petro

Radko G Bankras

Mark Olstad

Xavier Pages

Christianus Gerardus M De Ridder

Jack Herman Van Putten

Timothy Robert Landsmeer

Christopher Wuester

Arjen Benjamin Storm

Juul Keijser

Gnyanesh Trivedi

Robin Roelofs

Melvin Verbass

The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

Showerhead assembly and components

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

Manifolds for uniform vapor deposition

A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Substrate susceptor using edge purging

An apparatusfor processing a plurality of substratesis provided. The apparatus may have a process tubecreating a process chamber; a heatersurrounding the process tube; a flangefor supporting the process tube; and a doorconfigured to support a wafer boatwith a plurality of substratesin the process chamber and to seal the process chamber. An exhaust operably connected to the process chambermay be provided to remove gas from the process chamber via a first exhaust duct. The apparatus may be provided with an extractor chambersurrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust ductto remove gas from the extractor chamber.

Apparatus for processing a plurality of substrates provided with an extractor chamber

A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

Substrate processing apparatus with an injector

A chemical vapor deposition furnace for depositing silicon nitride films is disclosed. The furnace includes a process chamber elongated in a substantially vertical direction and a wafer boat for supporting a plurality of wafers in the process chamber. A process gas injector inside the process chamber is provided with vertically spaced gas injection holes to provide gas introduced at a feed end in an interior of the process gas injector to the process chamber. A valve system connected to the feed end of the process gas injector is being constructed and arranged to connect a source of a silicon precursor and a nitrogen precursor to the feed end for depositing silicon nitride layers. The valve system may connect the feed end of the process gas injector to a cleaning gas system to provide a cleaning gas to remove silicon nitride from the process gas injector and/or the process chamber.

Chemical vapor deposition furnace with a cleaning gas system to provide a cleaning gas

Batch furnace assembly for processing wafers, comprising a process chamber housing defining a process chamber and having a process chamber opening, a wafer boat housing defining a water boat chamber, a door assembly, a differential pressure sensor, and a controller. The door assembly has a closed position in which it closes off the process chamber opening. The door assembly defines in a closed position a door assembly chamber having a purge gas inlet for supplying purge gas to the door assembly chamber for gas sealingly separating the process chamber from the wafer boat chamber. The differential pressure sensor assembly fluidly connects to the door assembly chamber and is configured to determine a pressure difference between a pressure in the door assembly chamber and a reference pressure in a reference pressure chamber. The controller is configured to establish whether the pressure difference is in a desired pressure range.

Batch furnace assembly and method of operating a batch furnace assembly

Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.

Reactant vaporizer and related systems and methods

An apparatus for dispensing a vapor phase reactant to a reaction chamber is disclosed. The apparatus may include: a first chamber configured for holding a source chemical with a first fill level; and a second chamber configured for holding the source chemical with a second fill level and in fluid communication with the first chamber via a fluid channel below the first and second fill levels. The apparatus may also include: a second chamber inlet opening in fluid communication with a pressurizing gas feed provided with a flow controller configured for controlling a flow of a pressurizing gas in the second chamber to control the first fill level in the first chamber. Methods for dispensing a vapor phase reactant are also provided.

Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods

A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.

Semiconductor processing reactor and components thereof

A gas inlet system for a wafer processing reactor includes a tubular gas manifold conduit adapted to be connected to a gas inlet port of the wafer processing reactor; and gas feeds including a first feed for feeding a first gas into the tubular gas manifold conduit and a second feed for feeding a second gas into the tubular gas manifold conduit. Each feed has two or more injection ports connected to the tubular gas manifold conduit at a first axial position of the tubular gas manifold conduit, and the injection ports of each of the gas feeds are evenly distributed along a circumference of the tubular gas manifold conduit at the first axial position.

Gas supply manifold and method of supplying gases to chamber using same

An assembly of a liner and a flange for a vertical furnace for processing substrates is provided. The liner being configured to extend in the interior of a process tube of the vertical furnace, and the flange is configured to at least partially close a liner opening. The liner comprising a substantially cylindrical wall delimited by the liner opening at a lower end and closed at a higher end and being substantially closed for gases above the liner opening and defining an inner space. The flange comprising:

Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Reaction system for growing a thin film

Growing community of inventors

Amersfoort, Netherlands

Herbert Terhorst