Siemens Aktiengesellschaft

Infineon Technologies Ag

Siemens Aktiengesellchaft

Herbert Schwarzbauer

Karl Weidner

Norbert Seliger

Michael Kaspar

Leo Lorenz

Michael Kaindl

Peter Stern

Gerhard M&uuml;nzing

Manfred Br&uuml;ckmann

Jörg Zapf

Christofer Hierold

Manfred Bruckmann

Reinhold Kuhnert

Laurence Amigues

Eckhard Wolfgang

Walter Springmann

Matthias Rebhan

Kerstin Häse

Gerhard Münzing

A power module having at least one electric power component, such as a power electronic semiconductor component. An electrical contact for a load current is formed on a lower surface and also on an upper surface of the power semiconductor component. To reduce an explosion pressure and accept power when the power electronic semiconductor component is overloaded, a hollow space filled with at least one electrically conducting particle is formed on an electrical contact surface of the electrical contact. In case of a short circuit, an arc is initially generated above the semiconductor element thickness of the power semiconductor component, whereupon the filling in the hollow space takes over current conduction. Preferably, the filling in the hollow space is a plurality of spherical electrically conducting particles. The explosion pressure can escape into interstices in the filling if there is a short circuit. Furthermore, metal vapors are cooled and are condensed. A duct extending from and out of the hollow space can additionally be provided to reduce the explosion pressure, thus preventing power components from demolishing the surroundings during an electrical overload. The foregoing power module may be an improved thyristor.

Explosion-proof module structure for power components, particularly power semiconductor components, and production thereof

At least one film composite is laminated on a surface of at least one electrical component. The film composite includes at least one electrically-conducting plastic film with at least one electrically conducting conductor. The electrically-conducting plastic film has a high-ohmic resistance. This method may be used in planar large-surface electrical contacting technology for the production of modules with power semiconductors, where an electrical contacting of the components is achieved by the plastic films. A low lateral electrical conductivity is achieved, such that an electrical charging of the plastic films required for the contacting technology is prevented on operation of the component or the module.

Electrical component and film composite laminated on the component and method for production

Disclosed is a method for producing a package. According to said method, a substrate is provided, on a surface of which one or several components are disposed, and a hermetically sealing protective layer is formed on the one or several components and on the surface of the substrate. The hermetically sealing protective layer is impermeable to gas, liquid, and electromagnetic waves, temperature-resistant, electrically insulating, and process-resistant.

Arrangement for hermetically sealing components, and method for the production thereof

A film, based on polyimide or epoxy, is laminated onto a surface of a substrate under a vacuum, so that the film closely covers the surface and adheres thereto. Contact surfaces to be formed on the surface are uncovered by opening windows in the film. A contact is established in a plane manner between each uncovered contact surface and a layer of metal. This establishes a large-surface contact providing high current density for power semiconductor chips.

Method for making contact with electrical contact with electrical contact surfaces of substrate and device with substrate having electrical contact surfaces

A device with power semiconductor components controlling the power of high currents has each power semiconductor component insulated and fixed to a common cooled carrier body. Conductor bars, in addition to the power semiconductor components, are fixed to the carrier body, the conductor bars being electrically insulated and placed on top of each other, whereby each semiconductor bar has a free contact surface, and one electrical contact surface of each semiconductor component is electrically connected to a conductor bar by one or several electric conductor bridges and another electrical contact surface of the power semiconductor component is electrically connected to another bar conductor by one or several conductor bridges.

Device with power semiconductor components for controlling the power of high currents and use of said device

A heat-conducting adhesive compound is provided with a sintered layer ( ) that consists of heat-conducting power, is arranged between two workpieces and contacts each workpiece in a two-dimensional manner. The compound is also provided with an adhesive ( ) which fills openings ( ) on the surface ( ) of the layer and adheres to the two workpieces. In a preferred embodiment, the sintered layer consists of silver powder. The sintered layer is produced between the workpieces and the layer is subsequently filled with a liquid adhesive ( ) which is then hardened.

Heat-conducting adhesive joint with an adhesive-filled, porous heat conductor

A method for producing a heat-conducting connection between two work pieces (1, 2) includes the steps of first producing a porous sintered layer (3), interposed between the two work pieces (1, 2) and sintered onto every work piece (1, 2) across a certain area, and subsequently compacting the porous sintered layer (3) sintered onto the two work pieces (1, 2) by pressing the two work pieces (1, 2) against each other.

Method for producing a heat-conducting connection between two work pieces

A method for producing a microelectronic component of sandwich construction, which includes the steps of providing a first substrate which has a first conductor track plane, providing a plurality of semiconductor chips which have first contact faces electrically connected to the first conductor track plane, and second contact faces opposite the first sides. The method furthermore includes providing a second substrate which has a second conductor track plane with contact points, securing electrically conductive balls to the contact points of the second conductor track plane using an electrically conductive, flexible adhesive, applying an electrically conductive, flexible adhesive to the second contact faces of the plurality of semiconductor chips, and joining the first substrate and the second substrate together.

Method for producing a microelectronic component of sandwich construction

Nine bidirectionally blocking power components are attached on a substrate in the form of a three-row matrix. The power components are attached between three respective current conductors arranged parallel to each other above and below the power components. The current conductors above the matrix proceed at a right angle relative to the current conductors under the matrix. The interconnects to the gate and auxiliary emitter terminals are situated on or in a thin insulating printed circuit board or film and are secured to the corresponding contacts of the chips in recesses of the current conductors.

Matrix converter

A microelectronic component of sandwich construction, that includes a first substrate with a first conductor track plane and a second substrate with a second conductor track plane, between which many semiconductor chips are disposed. The contacting of the second conductor track plane to the adjacent surface of the semiconductor chips is effected by fixed contacting means, in particular with the soldered connections, an electrically conductive adhesive, or electrically conductive balls. The microelectronic components of the invention are suitable in particular as power components and can be used for instance in inverters. The invention also relates to a method for producing the microelectronic component.

Microelectronic component of sandwich construction

The power semiconductor component has a semiconductor body which is electrically supplied through a contact clip. A solder ball connects the semiconductor body to the contact clip. The contact clip has a meandering electrical supply to a solder land, into which the solder ball is inserted.

Electrical connection for a power semiconductor component

In a method for fastening electronic components on a substrate by means of pressure sintering, which includes providing a layer of sinterable metal powder on a surface of one component, assembling the components engaging the layer and then, while exerting a pressure on the components, applying heat to sinter the layer of material, an improvement comprises forming the layer of sinterable metal powder by vaporizing a metal and condensing the metal as a nanocrystalline metal powder on the surface. Preferably, the metal powder is silver and is applied in a precipitation chamber.

Pressure sintering method for fastening electronic components on a

The subject matter of the application is directed to a power semiconductor component, whereby, in addition to a load transistor, a plurality of transistors and resistors are monolithically integrated and form respective current mirrors together with the load transistor. Advantageously, resistors of polysilicon are produced simultaneously with gate electrodes, and resistors of aluminum are produced simultaneously with a contacting layer. A largely independent measurement of the load current, of the semiconductor temperature, and of the saturation voltage of the load transistor as well as an improvement in the measuring precision are possible as a result of the subject matter of the application.

Power semiconductor component with monolithically integrated sensor

Power semiconductor component having a buffer layer

A method for producing a semiconductor modular structure includes placing semiconductor bodies, a ceramic substrate with metallizing, and a metal base plate, in an elastomer compression mold. A heatable pressure ram with a surface being concave relative to the base plate is placed on the base plate. At least the base plate and the ceramic substrate are convexely deformed and joined with pressure exerted by the pressure ram, at a temperature above room temperature.

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Munich, Germany

Herbert Schwarzbauer