Siltronic Ag

Herbert Schmidt

Wilfried Von Ammon

Martin Weber

Katsuhiko Nakai

Andreas Sattler

Walter Haeckl

Janis Virbulis

Atsushi Ikari

Yuri Gelfgat

Leonid Gorbunov

Sei Fukushima

Thomas Wetzel

Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

Semiconductor wafers of silicon and method for their production

Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions &#x2267;20 &#x3bc;m below the wafer surface in the range of 5&#xd7;10/cm, and a density of BMDs with sizes of &#x2267;300 nm&#x2266;1&#xd7;10/cm, exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.

Silicon wafer for semiconductor and manufacturing method thereof

Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.

Method and device for producing semiconductor wafers of silicon

A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*10cmto 7.2*10cmand a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions

The Czochralski method is used for producing p-doped and epitaxially coated semiconductor wafers from silicon, wherein a silicon single crystal is pulled, and during the pulling is doped with boron, hydrogen and nitrogen, and the single crystal thus obtained is processed to form p-doped semiconductor wafers which are epitaxially coated.

Process for producing p-doped and epitaxially coated semiconductor wafers from silicon

A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.

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Halsbach, Germany

Herbert Schmidt