Agere Systems Inc.

Other

Lucent Technologies Inc.

Alcatel-lucent USA Inc.

Herbert R Shea

Sungho Jin

Arman Gasparyan

Susanne C Arney

Wei Zhu

Robert Bruce Van Dover

Omar D López

David John Bishop

In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

Providing a charge dissipation structure for an electrostatically driven device

The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer located proximate and electrically coupled to the substrate. The device may further include a moveable element located over the electrode.

Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor

A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems ('MEMS') device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be controlled by selection of the species, energy, and dose of implanted ions. With appropriate properties, such a charge-dissipation structure can reduce the effect on device operation of mobile charges in or on the dielectric.

Charge dissipation in electrostatically driven devices

The present invention provides an oxidation sensor for an electrical circuit or MEMS device that includes a conductor located on an insulating substrate and a sensor trace located on the insulating substrate adjacent the conductor. The sensor trace is located on the insulating substrate adjacent the conductor and is configured to oxidize at a rate greater than an electrical component associated with the sensor trace on the electrical circuit or MEMS device when the sensor trace and the electrical component are exposed to a same oxidizing environment. By oxidizing and thus becoming an open circuit more rapidly than any structure on a electrical circuit or MEMS device at a given relative humidity (i.e. in the same package), the oxidation sensor is designed to provide early warning of oxidation. Thus, the present invention serves as a sensor that will give advance warning of a leaky package and associated oxidation.

Oxidation sensor for an electrical circuit and a method of manufacture therefor

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Washington Township, NJ, United States of America

Herbert R Shea