Siemens Aktiengesellschaft

Herbert Kramer

Wolfgang Keller

Konrad Reuschel

Rudolf Knoll

Wolfgang Munscher

Ludwig Nieberl

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A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

Process for producing phosophorous-doped silicon monocrystals having a

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Munich, Germany

Herbert Kramer