Infineon Technologies Ag

Siemens Aktiengesellschaft

Herbert Knapp

Hao Li

Saverio Trotta

Josef Boeck

Klaus Aufinger

Jonas Wursthorn

Rudolf Lachner

Rainer Stuhlberger

Florian Starzer

Herbert Jaeger

Oliver Frank

Karl Dominizi

Jonas Kammerer

Winfried Bakalski

Wilhelm Wilhelm

Daniel Kehrer

Herbert Schaefer

Erich Kolmhofer

Hans-Dieter Wohlmuth

Wolfgang Liebl

Jidan Al-Eryani

A method of operating a monolithic microwave integrated circuit (MMIC) in a radar transmitter includes: sending a radio frequency (RF) signal to a power amplifier of the radar transmitter, where the power amplifier is controlled by a termination control signal, where when the termination control signal is de-asserted, the power amplifier is configured to pass the RF signal through the power amplifier for transmission by an RF antenna, where when the termination control signal is asserted, the power amplifier is configured to terminate the RF signal in the power amplifier; transmitting the RF signal by de-asserting the termination control signal; and after de-asserting the termination control signal, disabling transmission of the RF signal by: reducing a power of the RF signal; and asserting the termination control signal.

Transmit power reduction for radio frequency transmitters

A cascaded radar sensor arrangement is disclosed. The arrangement includes a first buffer and a second buffer. The first buffer is within a first radar chip and includes a switch and is configured to mitigate a first leakage signal in the disabled mode. The second buffer is within a second radar chip and has a disabled mode. The second radar chip is cascaded with the first radar chip. A control unit is coupled to the first radar chip and the second radar chip and is configured to set the disabled mode for the first buffer.

Systems and methods for cascading radar chips having a low leakage buffer

One exemplary embodiment of the present invention relates to a circuit that includes at least one RF signal path for an RF signal and at least one power sensor, which is coupled to the RF signal path and configured to generate a sensor signal representing the power of the RF signal during normal operation of the circuit. The circuit further includes a circuit node for receiving an RF test signal during calibration operation of the circuit. The circuit node is coupled to the at least one power sensor, so that the at least one power sensor receives the RF test signal additionally or alternatively to the RF signal and generates the sensor signal as representing the power of the RF test signal.

RF front-end with power sensor calibration

An on-chip power sensor and a millimeter-wave communication device (e.g. transmitter or transceiver) on a chip including the on-chip power sensor are described. The millimeter-wave communication device can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna connection (e.g. pad). The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

Power sensor for integrated circuits

An on-chip power sensor and a millimeter-wave transmitter on a chip including the on-chip power sensor are described. The millimeter-wave transmitter can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna. The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

A mixing stage includes a first modulation stage that receives an input signal from a first common node of the mixing stage, a first local oscillator input that receives a local oscillator signal, and a first modulation signal output adapted to provide a first modulated signal. A second modulation stage of the mixing stage includes a second input that receives a phase inverted representation of the input signal from a second common node of the mixing stage, a second local oscillator input that receives the local oscillator signal, and a second modulation signal output adapted to provide a second modulated signal. A current generation circuit provides a supply current to the first common node and to the second common node. A current control circuit is adapted to superimpose an offset current to the current of at least one node of the first common node and the second common node.

Mixing stage, modulator circuit and a current control circuit

The present invention relates to a millimeter-wave transmitter on a chip comprising at least one transmit path coupleable to an oscillator, and an on-chip power sensor to measure at least a portion of a transmit power transmitted over the at least one transmit path. The present invention further relates to a method of calibrating a millimeter-wave transmitter on a chip and an on-chip power sensor coupleable to at least one transmit path of a millimeter-wave transmitter. The embodiments of the present invention provide a direct measure of transmit power provided within an individual one of the transmit paths of the millimeter-wave transmitter.

Millimeter-wave transmitter on a chip, method of calibration thereof and millimeter-wave power sensor on a chip

The disclosure provides an oscillator circuit for a voltage controlled oscillator. The oscillator circuit includes first and second coupled transmission lines, wherein the oscillator circuit is configured to provide a variable load impedance at a first end of a signal line of the first transmission line such that a variable inductance is provided between first and second ends of a signal line of the second transmission line in dependence on the variable load impedance. The oscillator circuit is configured to adjust the variable inductance provided between the first and second ends of the signal line of the second transmission line by adjusting the variable load impedance provided at the first end of the signal line of the first transmission line, wherein the variable inductance provided between the first and second ends of the signal line of the second transmission line constitutes a frequency determining element of the oscillator circuit.

Oscillator circuit

A method includes providing a first semiconductor chip comprising a ring-shaped metal structure extending along a contour of a first main surface of the semiconductor chip. The method includes encapsulating the first semiconductor chip with an encapsulation body thereby defining a second main surface and depositing a metal layer over the first semiconductor chip and the encapsulation body. A plurality of external contact pads are placed over the second main surface of the encapsulation body, the metal layer electrically coupling at least one external contact pad of the plurality of external contact pads to the ring-shaped metal structure. A seal ring is placed between the ring-shaped metal structure and the contour of the first main surface of the first semiconductor chip.

Method of forming a ring-shaped metal structure

A DC power supply circuit comprises an output configured to provide a power supply signal to an RF element for generating an RF output signal. Furthermore, the DC power supply circuit comprises an input configured to receive the RF output signal. The DC power supply circuit is configured to generate the DC power supply signal based on the received RF output signal.

Growing community of inventors

Munich, Germany

Herbert Knapp