International Business Machines Corporation

Other

Herbert I Stoller

Robert Anthony Rita

Mukta S Farooq

Harvey Charles Hamel

Edmund Juris Sprogis

Sudipta Kumar Ray

John Harold Magerlein

Chirag Suryakant Patel

Leon L Wu

Glenn Graham Daves

Charles J Kraus

John Ulrich Knickerbocker

Rajesh Bhikhubhai Patel

Shaji Farooq

Ajay Prabhakar Giri

Jason Lee Frankel

Paul Robert Walling

Daniel P O'Connor

William Frederick Shutler

Lisa M Studzinski

John F Vetrero

Anthony Wayne Sigler

Cathy Ann Zadany

Evan G Colgan

Mario John Interrante

Wiren Dale Becker

Lloyd Andre Walls

Peter Jeffrey Brofman

Harsaran S Bhatia

Shashi D Malaviya

Narasipur G Anantha

Tai Anh Cao

Dinesh Gupta

Richard R Konian

James L Walsh

Joseph R Cavaliere

Thanh D Trinh

George A Katopis

Suresh D Kadakia

Sundar M Kamath

Gurumakonda R Srinivasan

Mark Harrison McLeod

Kathleen M Wiley

Warren D Grobman

Chandrashekhar Ramaswamy

Irving Feinberg

Sundar Mangalore Kamath

By Paula Kraus, Executrix

Charles J Kraus, Deceased

A Silicon Based Package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including metal capture structures in contact with the first surface and multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the reverse side of the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Form via holes with tapered or vertical sidewalls, which extend through the UTSW to reach the metal capture structures. Then form metal pads in the via holes which extend through the UTSW, making electrical contact to the metal capture structures. Then bond the metal pads in the via holes to pads of a carrier.

Method and manufacture of silicon based package and devices manufactured thereby

Silicon based package

A multiple power density packaging structure with two or more semiconductor chips on a common wiring substrate having a common thermal spreader with a planar surface in thermal contact with the non-active surfaces of the chips. The semiconductor chips have different cooling requirements and some of the chips are thinned to insure that the chips requiring the lowest thermal resistance has the thinnest layer of a thermal adhesive or metal or solder interface between the chip and thermal spreader.

Multiple power density chip structure

Method of manufacture of silicon based package and devices manufactured thereby

A jogging structure for translating wiring connections from points in a first grid to corresponding points in a second grid in a chip carrier module is disclosed. In an exemplary embodiment, the structure includes a first translation layer, coupled to the first grid, the first translation layer translating the first grid in an x-axis direction. A second translation layer is coupled to the first translation layer, the second translation layer for translating said wiring connections from the first grid in a y-axis direction, the y-axis direction being orthogonal to the x-axis direction. The second translation layer is further coupled to the second grid.

Jogging structure for wiring translation between grids with non-integral pitch ratios in chip carrier modules

A silicon based package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Forming via holes which extend through the UTSW, forming metallization in the via holes which extends through the UTSW, making electrical contact to the interconnection structure on the first surface. Then bond the metallization in the via holes to pads of a carrier.

Method of manufacture of silicon based package

A multi chip module substrate arranged with repair vias and repair lines extending between repair vias of the chip sites of the module by which repairs can be effected to overcome defects in the module circuits and a method for effecting the repairs of defects in the circuits of this module. A defect can occur in any one of a first signal via, a second signal via, and a circuit line extending between and intended to electrically connect the first signal via and the second signal via. After a defective circuit is identified, the signal vias of the circuit are isolated. Then, the first signal via of the defective circuit is electrically connected to that repair via of the chip site having the first signal via that is connected to that repair via of the chip site having the second signal via and the second signal via of the defective circuit is electrically connected to that repair via of the chip site having the second signal via that is connected to that repair via of the chip site having the first signal via.

Apparatus and method for repairing electronic packages

A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

High k dielectric material with low k dielectric sheathed signal vias

A semiconductor package in which a memory module (a SIMM or DIMM, for example) is mounted edgewise on a ceramic substrate. In another embodiment, a semiconductor package in which a chip scale package is mounted edgewise on a ceramic substrate.

Semiconductor package containing multiple memory units

A high performance TF-ceramic module for mounting integrated circuit chips thereto and a method of fabricating the module at reduced cost. The substrate includes thin film (TF) layers formed directly on a layered ceramic base. A first thick film wiring layer is formed on or embedded in a top surface of the thick film layered ceramic base using thick film techniques. A first dielectric layer of a polyimide or other organic material, or an insulating material different than the ceramic material is formed on top of the first wiring layer. The dielectric layer may be spun on or sprayed on and baked; vapor deposited; laminated to the ceramic base; or an inorganic layer may be deposited using plasma enhanced chemical vapor deposition (PECVD). Vias are formed through the first dielectric layer. A second wiring layer is formed on the first dielectric layer. A second dielectric layer is formed on the second wiring layer. At least one mounting location suitable for mounting an electronic component is formed on the second dielectric layer. The substrate may be attached a printed circuit board by direct attachment, pin grid array (PGA), land grid array (LGA), ball grid array (BGA), column grid array (CGA) and miniBGA on the bottom layer of the ceramic base.

Direct deposit thin film single/multi chip module

An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mm thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer is comprised of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mm for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

Method for a thin film multilayer capacitor

Method for making high k dielectric material with low k dielectric sheathed signal vias

High k dielectric capacitor with low k sheathed signal vias

A high performance TF-ceramic module for mounting integrated circuit chips thereto and a method of fabricating the module at reduced cost. The substrate includes thin film (TF) layers formed directly on a layered ceramic base. A first thick film wiring layer is formed on or embedded in a top surface of the thick film layered ceramic base using thick film techniques. A first dielectric layer of a polyimide or other organic material, or an insulating material different than the ceramic material is formed on top of the first wiring layer. The dielectric layer may be spun on or sprayed on and baked; vapor deposited; laminated to the ceramic base; or an inorganic layer may be deposited using plasma enhanced chemical vapor deposition (PECVD). Vias are formed through the first dielectric layer. A second wiring layer is formed on the first dielectric layer. A second dielectric layer is formed on the second wiring layer. At least one mounting location suitable for mounting an electronic component is formed on the second dielectric layer. The substrate may be attached a printed circuit board by direct attachment, pin grid array (PGA), land grid array (LGA), ball arid array (BGA), column grid array (CGA) and miniBGA on the bottom layer of the ceramic base.

Growing community of inventors

Poughkeepsie, NY, United States of America

Herbert I Stoller